All MOSFET. IRF9953 Datasheet

 

IRF9953 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9953

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6.1 nC

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: SO8

IRF9953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9953 Datasheet (PDF)

1.1. irf9953.pdf Size:107K _international_rectifier

IRF9953
IRF9953

PD - 9.1560A IRF9953 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.25? Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade: IRF7

4.1. irf9952qpbf.pdf Size:280K _upd-mosfet

IRF9953
IRF9953

PD - 96115 IRF9952QPbF HEXFET® Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET l Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 l Available in Tape & Reel S2 D2 l 150°C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.10Ω 0.25Ω l Lead-Free Top V

4.2. irf9952.pdf Size:134K _international_rectifier

IRF9953
IRF9953

PD - 9.1561A IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel MOSFET G1 D1 Surface Mount VDSS 30V -30V 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses P -CH AN N EL M OSFET RDS(on) 0.10? 0.25? Fully Avalanche Rated T op V iew Recommended upgrade: IRF7309

 4.3. irf9956.pdf Size:107K _international_rectifier

IRF9953
IRF9953

PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.10? Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade: IRF

Datasheet: IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 , 2N4416 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 .

 

 
Back to Top

 


IRF9953
  IRF9953
  IRF9953
  IRF9953
 

social 

LIST

Last Update

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top