IRF9953
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9953
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min)
V
|Id|ⓘ - Maximum Drain Current: 2.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.1(max)
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25
Ohm
Package:
SO8
IRF9953
Datasheet (PDF)
..1. Size:107K international rectifier
irf9953.pdf 
PD - 9.1560AIRF9953PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -30V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching Losses RDS(on) = 0.25 Fully Avalanche RatedT op V iewDescriptionFifth Generation HEXFETs from International RectifierRecommended upgrade
..2. Size:206K infineon
irf9953pbf.pdf
PD - 95477IRF9953PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MOSFETVDSS = -30V2 7G1 D1l Surface Mount3l Very Low Gate Charge and 6S2 D2Switching Losses4 5G2 D2RDS(on) = 0.25l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International RectifierRecommended
8.1. Size:324K 1
auirf9952q.pdf
AUTOMOTIVE GRADE AUIRF9952Q Features N-CHANNEL MOSFET Advanced Planar Technology N-CH P-CH1 8S1 D1 Low On-Resistance 2 7G1 D1 Logic Level Gate Drive VDSS 30V -30V3 6S2 D2 Dual N and P Channel MOSFET 45G2 D2RDS(on) max. 0.10 0.25 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 3.5A -2.3A
8.2. Size:134K international rectifier
irf9952.pdf
PD - 9.1561AIRF9952PRELIMINARYHEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFE T1 8 N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MOSFETG1 D1 Surface Mount VDSS 30V -30V3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesP -CH AN N EL M OSFETRDS(on) 0.10 0.25 Fully Avalanche RatedT op V iewRecommended upgrade:
8.3. Size:280K international rectifier
irf9952qpbf.pdf
PD - 96115IRF9952QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETl Ultra Low On-Resistance 1 8N-Ch P-ChS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6l Available in Tape & ReelS2 D2l 150C Operating Temperature4 5G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.10 0.25l Lead-FreeTop V
8.4. Size:107K international rectifier
irf9956.pdf
PD - 9.1559AIRF9956PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Very Low Gate Charge and4 5G2 D2Switching LossesRDS(on) = 0.10 Fully Avalanche RatedT op V iewDescriptionFifth Generation HEXFETs from International RectifierRecommended upgrad
8.5. Size:224K infineon
irf9952pbf.pdf
PD - 95135IRF9952PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7l Dual N and P Channel MOSFETG1 D1l Surface Mount VDSS 30V -30V3 6S2 D2l Very Low Gate Charge and4 5G2 D2Switching LossesP-CHANNEL MOSFETRDS(on) 0.10 0.25l Fully Avalanche RatedTop Viewl Lead-FreeRecommended upgrade:
8.6. Size:169K infineon
irf9956pbf.pdf
PD - 95259IRF9956PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 30V2 7l Surface Mount G1 D1l Very Low Gate Charge and 3 6S2 D2Switching Losses4 5G2 D2RDS(on) = 0.10l Fully Avalanche Ratedl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International RectifierRecommended upg
Datasheet: IRF9632
, IRF9633
, IRF9640
, IRF9640S
, IRF9641
, IRF9642
, IRF9643
, IRF9952
, 12N60
, IRF9Z10
, IRF9Z12
, IRF9Z14
, IRF9Z14S
, IRF9Z15
, IRF9Z20
, IRF9Z22
, IRF9Z24
.
