2SK943
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK943
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 25
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15
nS
Cossⓘ - Capacitancia
de salida: 940
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046
Ohm
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de MOSFET 2SK943
2SK943
Datasheet (PDF)
9.1. Size:138K 1
2sk948.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.6. Size:540K toshiba
2sk944.pdf
Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor
9.8. Size:134K fuji
2sk949m.pdf
"2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.11. Size:304K inchange semiconductor
2sk948.pdf
isc N-Channel MOSFET Transistor 2SK948 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.12. Size:203K inchange semiconductor
2sk944.pdf
isc N-Channel MOSFET Transistor 2SK944 DESCRIPTION Drain Current I =22A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V
9.13. Size:279K inchange semiconductor
2sk947-mr.pdf
isc N-Channel MOSFET Transistor 2SK947-MR FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
9.14. Size:278K inchange semiconductor
2sk949-mr.pdf
isc N-Channel MOSFET Transistor 2SK949-MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
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