2SK943. Аналоги и основные параметры
Наименование производителя: 2SK943
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 940 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
Тип корпуса: TO220F
Аналог (замена) для 2SK943
- подборⓘ MOSFET транзистора по параметрам
2SK943 даташит
9.1. Size:138K 1
2sk948.pdf 
Discontinued product. Discontinued product. Discontinued product.
9.6. Size:540K toshiba
2sk944.pdf 
Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor
9.8. Size:134K fuji
2sk949m.pdf 
"2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK949M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.11. Size:304K inchange semiconductor
2sk948.pdf 
isc N-Channel MOSFET Transistor 2SK948 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.12. Size:203K inchange semiconductor
2sk944.pdf 
isc N-Channel MOSFET Transistor 2SK944 DESCRIPTION Drain Current I =22A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V
9.13. Size:279K inchange semiconductor
2sk947-mr.pdf 
isc N-Channel MOSFET Transistor 2SK947-MR FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
9.14. Size:278K inchange semiconductor
2sk949-mr.pdf 
isc N-Channel MOSFET Transistor 2SK949-MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
Другие IGBT... 2SK3900-ZP, 2SK3901-ZK, 2SK3902-ZK, 2SK3774-01L, 2SK3774-01S, 2SK3774-01SJ, 2SK903MR, 2SK930, CS150N03A8, 2SK944, 2SK945, 2SK949M, 2SK874, 2SK903-M, 2SK872, 2SK873, 2SK152
