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2SK2857C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2857C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: SOT89

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2SK2857C Datasheet (PDF)

 ..1. Size:192K  renesas
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2SK2857C
2SK2857C

Preliminary Data Sheet 2SK2857C R07DS1261EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 11, 2015Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 105 m MAX. (VGS =

 7.1. Size:188K  renesas
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2SK2857C
2SK2857C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:1046K  kexin
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2SK2857C
2SK2857C

SMD Type MOSFETN-Channel MOSFET2SK28571.70 0.1 Features VDS (V) = 60V ID = 4 A0.42 0.1 RDS(ON) 150m (VGS = 10V) 0.46 0.1 RDS(ON) 220m (VGS = 4V)1.GateDrain2.Drain3.SourceInternalGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Sou

 7.3. Size:851K  cn vbsemi
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2SK2857C
2SK2857C

2SK2857www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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