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Preliminary Data Sheet 2SK2857C R07DS1261EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 11, 2015 Description The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 105 m MAX. (VGS =

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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SMD Type MOSFET N-Channel MOSFET 2SK2857 1.70 0.1 Features VDS (V) = 60V ID = 4 A 0.42 0.1 RDS(ON) 150m (VGS = 10V) 0.46 0.1 RDS(ON) 220m (VGS = 4V) 1.Gate Drain 2.Drain 3.Source Internal Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Sou

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2SK2857 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no