IRF9Z22 Todos los transistores

PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175 C Operating Temperature RDS(on) = 0.175 P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi

PD- 95415 IRF9Z24PbF Lead-Free 06/14/04 Document Number 91090 www.vishay.com 1 IRF9Z24PbF Document Number 91090 www.vishay.com 2 IRF9Z24PbF Document Number 91090 www.vishay.com 3 IRF9Z24PbF Document Number 91090 www.vishay.com 4 IRF9Z24PbF Document Number 91090 www.vishay.com 5 IRF9Z24PbF Document Number 91090 www.vishay.com 6 IRF9Z24PbF Document Number 91

PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175 C Operating Temperature RDS(on) = 0.28 Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 94982 IRF9Z24NPbF Lead-Free www.irf.com 1 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit *

PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS

PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS

PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.175 P-Channel G Fully Avalanche Rated ID = -12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.28 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 19 175 C Operating Temperature Qgs (nC) 5.4 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Require

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.28 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 19 175 C Operating Temperature Qgs (nC) 5.4 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Require

IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Available Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.28 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 26 Low Drive Current Qgs (nC) 6.2 Ease of Paralleling Qgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4

IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Available Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.28 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 26 Low Drive Current Qgs (nC) 6.2 Ease of Paralleling Qgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4

IRF9Z24NS www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load