All MOSFET. IRF9Z22 Datasheet

 

IRF9Z22 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9Z22

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 8.9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.33 Ohm

Package: TO220

IRF9Z22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9Z22 Datasheet (PDF)

4.1. irf9z24.pdf Size:174K _international_rectifier

IRF9Z22
IRF9Z22

4.2. irf9z24pbf.pdf Size:1214K _international_rectifier

IRF9Z22
IRF9Z22

PD- 95415 IRF9Z24PbF • Lead-Free 06/14/04 Document Number: 91090 www.vishay.com 1 IRF9Z24PbF Document Number: 91090 www.vishay.com 2 IRF9Z24PbF Document Number: 91090 www.vishay.com 3 IRF9Z24PbF Document Number: 91090 www.vishay.com 4 IRF9Z24PbF Document Number: 91090 www.vishay.com 5 IRF9Z24PbF Document Number: 91090 www.vishay.com 6 IRF9Z24PbF Document Number: 91090 w

4.3. irf9z24ns.pdf Size:168K _international_rectifier

IRF9Z22
IRF9Z22

PD - 91742A IRF9Z24NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175°C Operating Temperature RDS(on) = 0.175? P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

4.4. irf9z24n.pdf Size:109K _international_rectifier

IRF9Z22
IRF9Z22

PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.175? P-Channel G Fully Avalanche Rated ID = -12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

4.5. irf9z24s.pdf Size:311K _international_rectifier

IRF9Z22
IRF9Z22

PD - 9.912A IRF9Z24S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175°C Operating Temperature RDS(on) = 0.28? Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

4.6. irf9z24 sihf9z24.pdf Size:196K _vishay

IRF9Z22
IRF9Z22

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.28 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 19 • 175 °C Operating Temperature Qgs (nC) 5.4 • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Complia

4.7. irf9z20 sihf9z20.pdf Size:1213K _vishay

IRF9Z22
IRF9Z22

IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • P-Channel Versatility VDS (V) - 50 Available • Compact Plastic Package RDS(on) (?)VGS = - 10 V 0.28 RoHS* • Fast Switching COMPLIANT Qg (Max.) (nC) 26 • Low Drive Current Qgs (nC) 6.2 • Ease of Paralleling Qgd (nC) 8.6 • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Configuratio

4.8. irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf Size:167K _vishay

IRF9Z22
IRF9Z22

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.28 • Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 • Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) • 175 °C Operating Temperature Qgs (nC) 5.4 • Fast Switchin

Datasheet: IRF9952 , IRF9953 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , 2SK2996 , IRF9Z24 , IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 .

 


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