IRF9Z22 Datasheet. Specs and Replacement
Type Designator: IRF9Z22 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO220AB
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IRF9Z22 datasheet
8.2. Size:168K international rectifier
irf9z24ns.pdf 
PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175 C Operating Temperature RDS(on) = 0.175 P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒
8.3. Size:1214K international rectifier
irf9z24pbf.pdf
PD- 95415 IRF9Z24PbF Lead-Free 06/14/04 Document Number 91090 www.vishay.com 1 IRF9Z24PbF Document Number 91090 www.vishay.com 2 IRF9Z24PbF Document Number 91090 www.vishay.com 3 IRF9Z24PbF Document Number 91090 www.vishay.com 4 IRF9Z24PbF Document Number 91090 www.vishay.com 5 IRF9Z24PbF Document Number 91090 www.vishay.com 6 IRF9Z24PbF Document Number 91... See More ⇒
8.4. Size:311K international rectifier
irf9z24s.pdf
PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175 C Operating Temperature RDS(on) = 0.28 Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒
8.6. Size:2354K international rectifier
irf9z24npbf.pdf
PD - 94982 IRF9Z24NPbF Lead-Free www.irf.com 1 IRF9Z24NPbF 2 www.irf.com IRF9Z24NPbF www.irf.com 3 IRF9Z24NPbF 4 www.irf.com IRF9Z24NPbF www.irf.com 5 IRF9Z24NPbF 6 www.irf.com IRF9Z24NPbF Peak Diode Recovery dv/dt Test Circuit * ... See More ⇒
8.7. Size:389K international rectifier
irf9z24nlpbf irf9z24nspbf.pdf
PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS... See More ⇒
8.8. Size:389K international rectifier
irf9z24nspbf irf9z24nlpbf.pdf
PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF Lead-Free www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPbF 4 www.irf.com IRF9Z24NS/LPbF www.irf.com 5 IRF9Z24NS/LPbF 6 www.irf.com IRF9Z24NS/LPbF www.irf.com 7 IRF9Z24NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS... See More ⇒
8.9. Size:110K international rectifier
irf9z24n.pdf
PD -9.1484B IRF9Z24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.175 P-Channel G Fully Avalanche Rated ID = -12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area... See More ⇒
8.10. Size:196K vishay
irf9z24 sihf9z24.pdf
IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.28 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 19 175 C Operating Temperature Qgs (nC) 5.4 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Require... See More ⇒
8.11. Size:197K vishay
irf9z24pbf sihf9z24.pdf
IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.28 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 19 175 C Operating Temperature Qgs (nC) 5.4 Fast Switching Qgd (nC) 11 Ease of Paralleling Configuration Single Simple Drive Require... See More ⇒
8.12. Size:1215K vishay
irf9z20pbf sihf9z20.pdf
IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Available Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.28 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 26 Low Drive Current Qgs (nC) 6.2 Ease of Paralleling Qgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/... See More ⇒
8.13. Size:167K vishay
irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4 ... See More ⇒
8.14. Size:166K vishay
irf9z24l.pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4 ... See More ⇒
8.15. Size:1213K vishay
irf9z20 sihf9z20.pdf
IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel Versatility VDS (V) - 50 Available Compact Plastic Package RDS(on) ( )VGS = - 10 V 0.28 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 26 Low Drive Current Qgs (nC) 6.2 Ease of Paralleling Qgd (nC) 8.6 Excellent Temperature Stability Compliant to RoHS Directive 2002/... See More ⇒
8.16. Size:193K vishay
irf9z24spbf sihf9z24l sihf9z24s.pdf
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4 ... See More ⇒
8.17. Size:815K cn vbsemi
irf9z24ns.pdf
IRF9Z24NS www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load... See More ⇒
Detailed specifications: IRF9952, IRF9953, IRF9Z10, IRF9Z12, IRF9Z14, IRF9Z14S, IRF9Z15, IRF9Z20, K4145, IRF9Z24, IRF9Z24N, IRF9Z24NL, IRF9Z24NS, IRF9Z24S, IRF9Z25, IRF9Z30, IRF9Z32
Keywords - IRF9Z22 MOSFET specs
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