2SK849 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK849  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm

Encapsulados: TO3PN

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2SK849 datasheet

 ..1. Size:60K  inchange semiconductor
 2sk849.pdf pdf_icon

2SK849

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK849 DESCRIPTION Drain Current ID=40A@ TC=25 Drain Source Voltage- VDSS=60V(Min) APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN

 9.1. Size:198K  inchange semiconductor
 2sk843.pdf pdf_icon

2SK849

isc N-Channel MOSFET Transistor 2SK843 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60 V DSS GS V Gate-Source

 9.2. Size:200K  inchange semiconductor
 2sk846.pdf pdf_icon

2SK849

isc N-Channel MOSFET Transistor 2SK846 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DSS GS

 9.3. Size:199K  inchange semiconductor
 2sk845.pdf pdf_icon

2SK849

isc N-Channel MOSFET Transistor 2SK845 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

MOSTRAR MÁS

Otros transistores... 2SK3688-01S, 2SK3688-01SJ, 2SK3689-01, 2SK3690-01, 2SK3691-01MR, 2SK819, 2SK831, 2SK833, IRLB4132, 2SK851, 2SK854, 2SK855, 2SK856, 2SK858, 2SK859, 2SK867, 2SK867A