2SK849 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK849 Datasheet (PDF)

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK849 DESCRIPTION Drain Current ID=40A@ TC=25 Drain Source Voltage- : VDSS=60V(Min) APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN

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isc N-Channel MOSFET Transistor 2SK843DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Source

9.2. Size:200K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK846DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDSS GS

9.3. Size:199K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK845DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS