2SK849 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: 2SK849

..1. Size:60K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK849 DESCRIPTION Drain Current ID=40A@ TC=25 Drain Source Voltage- VDSS=60V(Min) APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN

9.1. Size:198K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK843 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60 V DSS GS V Gate-Source

9.2. Size:200K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK846 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DSS GS

9.3. Size:199K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK845 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS