2SK849
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK849
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038
Ohm
Package:
TO3PN
2SK849
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK849
Datasheet (PDF)
..1. Size:60K inchange semiconductor
2sk849.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK849 DESCRIPTION Drain Current ID=40A@ TC=25 Drain Source Voltage- : VDSS=60V(Min) APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN
9.1. Size:198K inchange semiconductor
2sk843.pdf
isc N-Channel MOSFET Transistor 2SK843DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Source
9.2. Size:200K inchange semiconductor
2sk846.pdf
isc N-Channel MOSFET Transistor 2SK846DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDSS GS
9.3. Size:199K inchange semiconductor
2sk845.pdf
isc N-Channel MOSFET Transistor 2SK845DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS
9.4. Size:199K inchange semiconductor
2sk844.pdf
isc N-Channel MOSFET Transistor 2SK844DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 100 VDSS GSV Gate-Source
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