2SK868A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK868A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 150 nS
Cossⓘ - Capacitancia de salida: 430 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de 2SK868A MOSFET
2SK868A Datasheet (PDF)
2sk868a.pdf
isc N-Channel MOSFET Transistor 2SK868ADESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela
2sk868.pdf
isc N-Channel MOSFET Transistor 2SK868DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Otros transistores... 2SK854 , 2SK855 , 2SK856 , 2SK858 , 2SK859 , 2SK867 , 2SK867A , 2SK868 , IRF1010E , 2SK869 , 2SK870 , 2SK871 , 2SK3987-01L , 2SK3987-01S , 2SK3987-01SJ , 2SK3988-01 , 2SK3989-01MR .
History: 2SK785
History: 2SK785
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM13T05A | AGM12T12D | AGM12T12C | AGM12T12A | AGM12T08A | AGM12T05F | AGM12T05C | AGM12T05A | AGM12T02LL | AGM12N10MNA | AGM12N10D | AGM12N10AP | AGM12N10A | AGM10N65F | AGM10N15R | AGM1030MA
Popular searches
bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904

