2SK3987-01L Todos los transistores

 

2SK3987-01L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3987-01L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET 2SK3987-01L

 

2SK3987-01L Datasheet (PDF)

 ..1. Size:283K  inchange semiconductor
2sk3987-01l.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3987-01LFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 0.1. Size:300K  fuji
2sk3987-01l-01s-01sj.pdf

2SK3987-01L
2SK3987-01L

2SK3987-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 4.1. Size:357K  inchange semiconductor
2sk3987-01s.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3987-01SFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 8.1. Size:284K  1
2sk398.pdf

2SK3987-01L
2SK3987-01L

 8.2. Size:262K  nec
2sk3984-zk.pdf

2SK3987-01L
2SK3987-01L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:294K  fuji
2sk3986-01mr.pdf

2SK3987-01L
2SK3987-01L

2SK3986-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

 8.4. Size:221K  fuji
2sk3981-01.pdf

2SK3987-01L
2SK3987-01L

2SK3981-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proof High voltageApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc

 8.5. Size:294K  fuji
2sk3989-01mr.pdf

2SK3987-01L
2SK3987-01L

2SK3989-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)

 8.6. Size:234K  fuji
2sk3983-01l-s-sj.pdf

2SK3987-01L
2SK3987-01L

2SK3983-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

 8.7. Size:292K  fuji
2sk3985-01.pdf

2SK3987-01L
2SK3987-01L

2SK3985-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

 8.8. Size:221K  fuji
2sk3982-01mr.pdf

2SK3987-01L
2SK3987-01L

2SK3982-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceTO-220FNo secondary breadown Low driving powerAvalanche-proof High voltageApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T

 8.9. Size:292K  fuji
2sk3988-01.pdf

2SK3987-01L
2SK3987-01L

2SK3988-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

 8.10. Size:357K  inchange semiconductor
2sk3983-01s.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3983-01SFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.11. Size:280K  inchange semiconductor
2sk3986-01mr.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3986-01MRFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.12. Size:276K  inchange semiconductor
2sk398.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK398FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 250m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.13. Size:289K  inchange semiconductor
2sk3981-01.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3981-01FEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.14. Size:289K  inchange semiconductor
2sk3989-01mr.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3989-01MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.15. Size:283K  inchange semiconductor
2sk3983-01l.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3983-01LFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.16. Size:289K  inchange semiconductor
2sk3985-01.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3985-01FEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.17. Size:357K  inchange semiconductor
2sk3983-01sj.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3983-01SJFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.18. Size:280K  inchange semiconductor
2sk3982-01mr.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3982-01MRFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.19. Size:289K  inchange semiconductor
2sk3988-01.pdf

2SK3987-01L
2SK3987-01L

isc N-Channel MOSFET Transistor 2SK3988-01FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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