2SK3987-01L Datasheet. Specs and Replacement
Type Designator: 2SK3987-01L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ -
Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO262
- MOSFET ⓘ Cross-Reference Search
2SK3987-01L datasheet
..1. Size:283K inchange semiconductor
2sk3987-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3987-01L FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
0.1. Size:300K fuji
2sk3987-01l-01s-01sj.pdf
2SK3987-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C... See More ⇒
4.1. Size:357K inchange semiconductor
2sk3987-01s.pdf
isc N-Channel MOSFET Transistor 2SK3987-01S FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
8.2. Size:262K nec
2sk3984-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.3. Size:294K fuji
2sk3986-01mr.pdf
2SK3986-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
8.4. Size:221K fuji
2sk3981-01.pdf
2SK3981-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc... See More ⇒
8.5. Size:294K fuji
2sk3989-01mr.pdf
2SK3989-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) ... See More ⇒
8.6. Size:234K fuji
2sk3983-01l-s-sj.pdf
2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C... See More ⇒
8.7. Size:292K fuji
2sk3985-01.pdf
2SK3985-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.8. Size:221K fuji
2sk3982-01mr.pdf
2SK3982-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (T... See More ⇒
8.9. Size:292K fuji
2sk3988-01.pdf
2SK3988-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.10. Size:357K inchange semiconductor
2sk3983-01s.pdf
isc N-Channel MOSFET Transistor 2SK3983-01S FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.11. Size:280K inchange semiconductor
2sk3986-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3986-01MR FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.12. Size:276K inchange semiconductor
2sk398.pdf
isc N-Channel MOSFET Transistor 2SK398 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
8.13. Size:289K inchange semiconductor
2sk3981-01.pdf
isc N-Channel MOSFET Transistor 2SK3981-01 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.14. Size:289K inchange semiconductor
2sk3989-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3989-01MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
8.15. Size:283K inchange semiconductor
2sk3983-01l.pdf
isc N-Channel MOSFET Transistor 2SK3983-01L FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.16. Size:289K inchange semiconductor
2sk3985-01.pdf
isc N-Channel MOSFET Transistor 2SK3985-01 FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.17. Size:357K inchange semiconductor
2sk3983-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3983-01SJ FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.18. Size:280K inchange semiconductor
2sk3982-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3982-01MR FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.19. Size:289K inchange semiconductor
2sk3988-01.pdf
isc N-Channel MOSFET Transistor 2SK3988-01 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
Detailed specifications: 2SK859, 2SK867, 2SK867A, 2SK868, 2SK868A, 2SK869, 2SK870, 2SK871, AON6380, 2SK3987-01S, 2SK3987-01SJ, 2SK3988-01, 2SK3989-01MR, 2SK3990-01L, 2SK3990-01S, 2SK3990-01SJ, 2SK3991
Keywords - 2SK3987-01L MOSFET specs
2SK3987-01L cross reference
2SK3987-01L equivalent finder
2SK3987-01L pdf lookup
2SK3987-01L substitution
2SK3987-01L replacement
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