2SK3989-01MR MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3989-01MR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3989-01MR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 21 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.3 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de 2SK3989-01MR MOSFET

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2SK3989-01MR datasheet

..1. Size:294K fuji
2sk3989-01mr.pdf pdf_icon

2SK3989-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified)

..2. Size:289K inchange semiconductor
2sk3989-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3989-01MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

8.1. Size:284K 1
2sk398.pdf pdf_icon

8.2. Size:262K nec
2sk3984-zk.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.3. Size:294K fuji
2sk3986-01mr.pdf pdf_icon

2SK3986-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

8.4. Size:300K fuji
2sk3987-01l-01s-01sj.pdf pdf_icon

2SK3987-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

8.5. Size:221K fuji
2sk3981-01.pdf pdf_icon

2SK3981-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc

8.6. Size:234K fuji
2sk3983-01l-s-sj.pdf pdf_icon

2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C

8.7. Size:292K fuji
2sk3985-01.pdf pdf_icon

2SK3985-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless

8.8. Size:221K fuji
2sk3982-01mr.pdf pdf_icon

2SK3982-01MR FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (T

8.9. Size:292K fuji
2sk3988-01.pdf pdf_icon

2SK3988-01 FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless

8.10. Size:357K inchange semiconductor
2sk3983-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3983-01S FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

8.11. Size:280K inchange semiconductor
2sk3986-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3986-01MR FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

8.12. Size:357K inchange semiconductor
2sk3987-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3987-01S FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

8.13. Size:276K inchange semiconductor
2sk398.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK398 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

8.14. Size:289K inchange semiconductor
2sk3981-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3981-01 FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

8.15. Size:283K inchange semiconductor
2sk3983-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3983-01L FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

8.16. Size:289K inchange semiconductor
2sk3985-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3985-01 FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

8.17. Size:283K inchange semiconductor
2sk3987-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3987-01L FEATURES Drain Current I = 3.6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

8.18. Size:357K inchange semiconductor
2sk3983-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3983-01SJ FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

8.19. Size:280K inchange semiconductor
2sk3982-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3982-01MR FEATURES Drain Current I = 2.6A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

8.20. Size:289K inchange semiconductor
2sk3988-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3988-01 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

Otros transistores... 2SK868A , 2SK869 , 2SK870 , 2SK871 , 2SK3987-01L , 2SK3987-01S , 2SK3987-01SJ , 2SK3988-01 , AON7506 , 2SK3990-01L , 2SK3990-01S , 2SK3990-01SJ , 2SK3991 , 2SK3991-ZK , 2SK3992 , 2SK3992-ZK , 2SK3993 .