2SK3989-01MR - параметры транзистора MOSFET, его аналоги, datasheet

2SK3989-01MR Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: 2SK3989-01MR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 21 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.3 Ohm
   Тип корпуса: TO220F

Аналог (замена) для 2SK3989-01MR

- подбор MOSFET транзистора по параметрам

2SK3989-01MR Datasheet (PDF)

..1. Size:294K fuji
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2SK3989-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)

..2. Size:289K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3989-01MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

8.1. Size:284K 1
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8.2. Size:262K nec
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.3. Size:294K fuji
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2SK3986-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

8.4. Size:300K fuji
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2SK3987-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

8.5. Size:221K fuji
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2SK3981-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proof High voltageApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc

8.6. Size:234K fuji
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2SK3983-01L,S,SJFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C

8.7. Size:292K fuji
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2SK3985-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

8.8. Size:221K fuji
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2SK3982-01MRFUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceTO-220FNo secondary breadown Low driving powerAvalanche-proof High voltageApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T

8.9. Size:292K fuji
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2SK3988-01FUJI POWER MOSFET200511N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless

8.10. Size:357K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3983-01SFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.11. Size:280K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3986-01MRFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

8.12. Size:357K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3987-01SFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

8.13. Size:276K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK398FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 250m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

8.14. Size:289K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3981-01FEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.15. Size:283K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3983-01LFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

8.16. Size:289K inchange semiconductor
2sk3985-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3985-01FEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.17. Size:283K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3987-01LFEATURESDrain Current : I = 3.6A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

8.18. Size:357K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3983-01SJFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.19. Size:280K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK3982-01MRFEATURESDrain Current : I = 2.6A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 6.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

8.20. Size:289K inchange semiconductor
2sk3988-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3988-01FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .