IRF9Z34 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9Z34 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 88 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 620 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Encapsulados: TO220AB
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IRF9Z34 datasheet
..2. Size:2039K international rectifier
irf9z34pbf.pdf 
PD - 94961 IRF9Z34PbF Lead-Free 01/30/04 Document Number 91092 www.vishay.com 1 IRF9Z34PbF Document Number 91092 www.vishay.com 2 IRF9Z34PbF Document Number 91092 www.vishay.com 3 IRF9Z34PbF Document Number 91092 www.vishay.com 4 IRF9Z34PbF Document Number 91092 www.vishay.com 5 IRF9Z34PbF Document Number 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package O
..3. Size:197K vishay
irf9z34 sihf9z34.pdf
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme
..4. Size:198K vishay
irf9z34pbf sihf9z34.pdf
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme
0.1. Size:108K international rectifier
irf9z34n.pdf
PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are
0.2. Size:241K international rectifier
auirf9z34n.pdf
PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S
0.3. Size:162K international rectifier
irf9z34ns.pdf
PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie
0.4. Size:1102K international rectifier
irf9z34nlpbf irf9z34nspbf.pdf
PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS
0.5. Size:1102K international rectifier
irf9z34nspbf irf9z34nlpbf.pdf
PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS
0.6. Size:334K international rectifier
irf9z34s.pdf
PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175 C Operating Temperature RDS(on) = 0.14 Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
0.7. Size:240K international rectifier
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lead-Free Description S
0.8. Size:168K vishay
irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9
0.9. Size:193K vishay
irf9z34spbf sihf9z34l sihf9z34s.pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9
0.10. Size:190K vishay
irf9z34l.pdf
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9
0.11. Size:814K cn vbsemi
irf9z34ns.pdf
IRF9Z34NS www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load
0.12. Size:242K inchange semiconductor
irf9z34n.pdf
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N FEATURES Static drain-source on-resistance RDS(on) 0.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia
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