IRF9Z34 datasheet, аналоги, основные параметры
Наименование производителя: IRF9Z34 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 620 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: TO220AB
📄📄 Копировать
Аналог (замена) для IRF9Z34
- подборⓘ MOSFET транзистора по параметрам
IRF9Z34 даташит
..2. Size:2039K international rectifier
irf9z34pbf.pdf 
PD - 94961 IRF9Z34PbF Lead-Free 01/30/04 Document Number 91092 www.vishay.com 1 IRF9Z34PbF Document Number 91092 www.vishay.com 2 IRF9Z34PbF Document Number 91092 www.vishay.com 3 IRF9Z34PbF Document Number 91092 www.vishay.com 4 IRF9Z34PbF Document Number 91092 www.vishay.com 5 IRF9Z34PbF Document Number 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package O
..3. Size:197K vishay
irf9z34 sihf9z34.pdf 
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme
..4. Size:198K vishay
irf9z34pbf sihf9z34.pdf 
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.14 P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT 175 C Operating Temperature Qgs (nC) 9.9 Fast Switching Qgd (nC) 16 Ease of Paralleling Configuration Single Simple Drive Requireme
0.1. Size:108K international rectifier
irf9z34n.pdf 
PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are
0.2. Size:241K international rectifier
auirf9z34n.pdf 
PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S
0.3. Size:162K international rectifier
irf9z34ns.pdf 
PD - 9.1525 IRF9Z34NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175 C Operating Temperature RDS(on) = 0.10 Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie
0.4. Size:1102K international rectifier
irf9z34nlpbf irf9z34nspbf.pdf 
PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS
0.5. Size:1102K international rectifier
irf9z34nspbf irf9z34nlpbf.pdf 
PD- 95769 IRF9Z34NSPbF IRF9Z34NLPbF Lead-Free www.irf.com 1 04/25/05 IRF9Z34NS/LPbF 2 www.irf.com IRF9Z34NS/LPbF www.irf.com 3 IRF9Z34NS/LPbF 4 www.irf.com IRF9Z34NS/LPbF www.irf.com 5 IRF9Z34NS/LPbF 6 www.irf.com IRF9Z34NS/LPbF www.irf.com 7 IRF9Z34NS/LPbF D2Pak Package Outline (Dimensions are shown in millimeters (inches) D2Pak Part Marking Information THIS IS
0.6. Size:334K international rectifier
irf9z34s.pdf 
PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175 C Operating Temperature RDS(on) = 0.14 Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
0.7. Size:240K international rectifier
irf9z34npbf.pdf 
IRF9Z34NPbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lead-Free Description S
0.8. Size:168K vishay
irf9z34s sihf9z34s irf9z34l sihf9z34l.pdf 
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9
0.9. Size:193K vishay
irf9z34spbf sihf9z34l sihf9z34s.pdf 
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9
0.10. Size:190K vishay
irf9z34l.pdf 
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.14 Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) 175 C Operating Temperature Qgs (nC) 9.9
0.11. Size:814K cn vbsemi
irf9z34ns.pdf 
IRF9Z34NS www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Load
0.12. Size:242K inchange semiconductor
irf9z34n.pdf 
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N FEATURES Static drain-source on-resistance RDS(on) 0.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia
Другие IGBT... IRF9Z24, IRF9Z24N, IRF9Z24NL, IRF9Z24NS, IRF9Z24S, IRF9Z25, IRF9Z30, IRF9Z32, 4435, IRF9Z34N, IRF9Z34NL, IRF9Z34NS, IRF9Z34S, IRF9Z35, IRFB11N50A, IRFB9N30A, IRFB9N60A
