2SK3603-01MR Todos los transistores

 

2SK3603-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3603-01MR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET 2SK3603-01MR

 

2SK3603-01MR Datasheet (PDF)

 ..1. Size:102K  fuji
2sk3603-01mr.pdf pdf_icon

2SK3603-01MR

2SK3603-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un

 ..2. Size:280K  inchange semiconductor
2sk3603-01mr.pdf pdf_icon

2SK3603-01MR

isc N-Channel MOSFET Transistor 2SK3603-01MR FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.1. Size:68K  renesas
2sk360.pdf pdf_icon

2SK3603-01MR

2SK360 Silicon N-Channel MOS FET REJ03G0811-0200 (Previous ADE-208-1170) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Gate 3 2. Drain 3. Source 1 2 Rev.2.00, Aug 10.2005, page 1 of 5 2SK360 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSX*1 20 V G

 8.2. Size:97K  fuji
2sk3601-01.pdf pdf_icon

2SK3603-01MR

2SK3601-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Foot Print Pattern Absolute maximum ratings

Otros transistores... 2SK3921-01S , 2SK3921-01SJ , 2SK3598-01 , 2SK3600-01L , 2SK3600-01S , 2SK3600-01SJ , 2SK3601-01 , 2SK3602-01 , AO3407 , 2SK3604-01L , 2SK3604-01S , 2SK3604-01SJ , 2SK3605-01 , 2SK3606-01 , 2SK3608-01L , 2SK3608-01S , 2SK3608-01SJ .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q | AP25N06K | AP2335 | AP2318A | AP2317SD | AP2317QD | AP2317A | AP2316 | AP2310 | AP2301B | AP20P30S

 

 

 
Back to Top

 

Popular searches

2sd438 | a1492 | hy4008 | ncep039n10m | 20n50 | 2sc869 | tip29 transistor equivalent | 2n555

 


 
.