2SK3603-01MR - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2SK3603-01MR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 23
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 2.8
ns
Cossⓘ - Выходная емкость: 130
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.105
Ohm
Тип корпуса:
TO220F
Аналог (замена) для 2SK3603-01MR
2SK3603-01MR Datasheet (PDF)
..1. Size:102K fuji
2sk3603-01mr.pdf 
2SK3603-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
..2. Size:280K inchange semiconductor
2sk3603-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3603-01MR FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.1. Size:68K renesas
2sk360.pdf 
2SK360 Silicon N-Channel MOS FET REJ03G0811-0200 (Previous ADE-208-1170) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Gate 3 2. Drain 3. Source 1 2 Rev.2.00, Aug 10.2005, page 1 of 5 2SK360 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSX*1 20 V G
8.2. Size:97K fuji
2sk3601-01.pdf 
2SK3601-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Foot Print Pattern Absolute maximum ratings
8.3. Size:255K fuji
2sk3608-01l-s-sj.pdf 
2SK3608-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.4. Size:101K fuji
2sk3606-01.pdf 
2SK3606-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.5. Size:105K fuji
2sk3609-01.pdf 
2SK3609-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (
8.6. Size:105K fuji
2sk3607-01mr.pdf 
2SK3607-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
8.7. Size:103K fuji
2sk3605-01.pdf 
2SK3605-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (
8.8. Size:247K fuji
2sk3600-01l-s-sj.pdf 
2SK3600-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.9. Size:253K fuji
2sk3604-01l-s-sj.pdf 
2SK3604-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.10. Size:99K fuji
2sk3602-01.pdf 
2SK3602-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.11. Size:282K inchange semiconductor
2sk3608l.pdf 
isc N-Channel MOSFET Transistor 2SK3608L FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.12. Size:357K inchange semiconductor
2sk3604s.pdf 
isc N-Channel MOSFET Transistor 2SK3604S FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.13. Size:288K inchange semiconductor
2sk3606-01.pdf 
isc N-Channel MOSFET Transistor 2SK3606-01 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.14. Size:356K inchange semiconductor
2sk3600s.pdf 
isc N-Channel MOSFET Transistor 2SK3600S FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.15. Size:279K inchange semiconductor
2sk3607-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3607-01MR FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s
8.16. Size:356K inchange semiconductor
2sk3608s.pdf 
isc N-Channel MOSFET Transistor 2SK3608S FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.17. Size:282K inchange semiconductor
2sk3600l.pdf 
isc N-Channel MOSFET Transistor 2SK3600L FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.18. Size:283K inchange semiconductor
2sk3604l.pdf 
isc N-Channel MOSFET Transistor 2SK3604L FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.19. Size:289K inchange semiconductor
2sk3602-01.pdf 
isc N-Channel MOSFET Transistor 2SK3602-01 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
Другие MOSFET... 2SK3921-01S
, 2SK3921-01SJ
, 2SK3598-01
, 2SK3600-01L
, 2SK3600-01S
, 2SK3600-01SJ
, 2SK3601-01
, 2SK3602-01
, AO3407
, 2SK3604-01L
, 2SK3604-01S
, 2SK3604-01SJ
, 2SK3605-01
, 2SK3606-01
, 2SK3608-01L
, 2SK3608-01S
, 2SK3608-01SJ
.
History: HM70P03K
