2SK1550 Todos los transistores

 

2SK1550 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1550
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO220F

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2SK1550 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
2sk1550.pdf

2SK1550
2SK1550

isc N-Channel MOSFET Transistor 2SK1550DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.1. Size:70K  fuji
2sk1553-01mr.pdf

2SK1550
2SK1550

 8.2. Size:210K  inchange semiconductor
2sk1554.pdf

2SK1550
2SK1550

isc N-Channel MOSFET Transistor 2SK1554DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =650 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.3. Size:211K  inchange semiconductor
2sk1553.pdf

2SK1550
2SK1550

isc N-Channel MOSFET Transistor 2SK1553DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =650 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 6

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