2SK1550 MOSFET. Datasheet pdf. Equivalent

2SK1550 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1550 Datasheet (PDF)

1.1. 2sk1550.pdf Size:55K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1550 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600 (Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) UNI SYM

5.1. 2sk1503-01.pdf Size:171K _update



5.2. 2sk1574.pdf Size:59K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1574 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) UNI SYM

 5.3. 2sk1538.pdf Size:156K _update



5.4. 2sk1525.pdf Size:161K _update



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5.6. 2sk1539.pdf Size:147K _update



5.7. 2sk1547-01mr.pdf Size:171K _update



5.8. 2sk1503.pdf Size:60K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1503 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

5.9. 2sk1590c.pdf Size:89K _update

 Preliminary Data Sheet 2SK1590C R07DS1276EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 24, 2015 Description The 2SK1590C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features  Directly driven by a 4.5 V power source.  Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = 10

5.10. 2sk1536.pdf Size:156K _update



5.11. 2sk1522-e1-e.pdf Size:143K _update

 Preliminary Datasheet 2SK1522-E1-E R07DS1195EJ0200 500V - 50A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.085 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC conver

5.12. 2sk1511.pdf Size:1474K _update

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5.13. 2sk1512-01.pdf Size:147K _update



5.14. 2sk1523.pdf Size:153K _update



5.15. 2sk1545 2sk1546.pdf Size:706K _update



5.16. 2sk1548-01mr.pdf Size:174K _update



5.17. 2sk1521-e1-e.pdf Size:160K _update

 Preliminary Datasheet 2SK1521-E1-E R07DS1194EJ0300 450V - 50A - MOS FET Rev.3.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.08 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC convert

5.18. 2sk1527-e1-e.pdf Size:142K _update

 Preliminary Datasheet 2SK1527-E1-E R07DS1196EJ0100 500V - 40A - MOS FET Rev.1.00 High Speed Power Switching Mar 26, 2014 Features • Low on-resistance RDS(on) = 0.12 Ω typ. (at ID = 20 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A (Package na

5.19. 2sk1542.pdf Size:775K _update



5.20. 2sk1534.pdf Size:145K _update



5.21. 2sk1572.pdf Size:988K _update

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.22. 2sk152.pdf Size:81K _update



5.23. 2sk1535.pdf Size:209K _update

查询2SK1535 供应商 查询2SK1535 供应商 

5.24. 2sk1529.pdf Size:287K _toshiba

2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 4.0 S (typ.) fs Complementary to 2SJ200 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS ±20 V Drai

5.25. 2sk1531.pdf Size:327K _toshiba



5.26. 2sk1530.pdf Size:382K _toshiba

2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application High breakdown voltage : VDSS = 200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 V

5.27. 2sk1544.pdf Size:442K _toshiba

2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII.5) 2SK1544 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.15 ? (typ.) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1 mA

5.28. 2sk1578.pdf Size:120K _sanyo

Ordering number:EN4178A N-Channel Junction FET 2SK1578 Capacitor Microphone Applications Features Package Dimensions � Especially suited for use in audio, telephone capaci- unit:mm tor microphones. 2034A � Excellent voltage characteristics. [2SK1578] � Excellent transient characteristics. 2.2 4.0 � Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gat

5.29. 2sk1515.pdf Size:84K _renesas

2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � Built-in fast recovery diode (trr = 120 ns) � Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE

5.30. 2sk1528.pdf Size:96K _renesas

2SK1528(L), 2SK1528(S) Silicon N Channel MOS FET REJ03G0951-0200 (Previous: ADE-208-1291) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PR

5.31. 2sk1519.pdf Size:83K _renesas

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � Built-in fast recovery diode (trr = 120 ns) � Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF

5.32. 2sk1526.pdf Size:83K _renesas

2SK1526, 2SK1527 Silicon N Channel MOS FET REJ03G0950-0200 (Previous: ADE-208-1290) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G

5.33. 2sk1573.pdf Size:82K _renesas

2SK1573 Silicon N Channel MOS FET REJ03G0955-0200 (Previous: ADE-208-1295) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G

5.34. rej03g0947 2sk1517ds.pdf Size:97K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.35. 2sk1540.pdf Size:95K _renesas

2SK1540(L), 2SK1540(S) Silicon N Channel MOS FET REJ03G0952-0200 (Previous: ADE-208-1292) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PR

5.36. 2sk1566.pdf Size:82K _renesas

2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous: ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � No secondary breakdown � Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D

5.37. rej03g0949 2sk1521ds.pdf Size:117K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.38. 2sk1579.pdf Size:70K _renesas

2SK1579 Silicon N Channel MOS FET REJ03G0956-0200 (Previous: ADE-208-1296) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Suitable for low voltage operation Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 1 2 1. Gate 3 2. Drain G 3. Source 4 4. Drain S Note: Marking is �DY�

5.39. rej03g0951 2sk1528lsds.pdf Size:108K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.40. 2sk1521.pdf Size:83K _renesas

2SK1521, 2SK1522 Silicon N Channel MOS FET REJ03G0949-0200 (Previous: ADE-208-1289) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � Built-in fast recovery diode (trr = 120 ns) � Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF

5.41. rej03g0955 2sk1573ds.pdf Size:96K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.42. rej03g0946 2sk1515ds.pdf Size:97K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.43. rej03g0950 2sk1526ds.pdf Size:116K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.44. 2sk1520.pdf Size:83K _renesas

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) • Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code:

5.45. 2sk1517.pdf Size:84K _renesas

2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 (Previous: ADE-208-1287) Rev.2.00 Sep 07, 2005 Application High speed power switching Features � Low on-resistance � High speed switching � Low drive current � Built-in fast recovery diode (trr = 120 ns) � Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE

5.46. 2sk1584 nec.pdf Size:57K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1584 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK1584 is a switching device which can be driven directly by a 5-V power source. 4.5�0.1 Electrode Connection The 2SK1584 features a low on-state resistance and excellent 1.5�0.1 1.6�0.2 1.Source switching characteristics, and is suitable for applications su

5.47. 2sk1499 2sk1500.pdf Size:406K _nec

5.48. 2sk1586.pdf Size:296K _nec



5.49. 2sk1506.pdf Size:86K _fuji



5.50. 2sk1507-01.pdf Size:174K _fuji

5.51. 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf Size:88K _interfet

Databook.fxp 1/13/99 2:09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V – 50 – 20 – 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS (– 20 V) (–10 V) (– 30 V) (

5.52. 2sk1537.pdf Size:152K _shindengen



5.53. 2sk1592.pdf Size:1002K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1592 1.70 0.1 ■ Features ● VDS (V) = 60V ● ID = 0.5A ● RDS(ON) ＜ 2.5Ω (VGS = 4V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 2Ω (VGS = 10V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.5 A Pulse

5.54. 2sk1584.pdf Size:1297K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1584 1.70 0.1 ■ Features ● VDS (V) = 30V ● ID = 0.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 1.5Ω (VGS = 10V) ● RDS(ON) ＜ 2Ω (VGS = 4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.5 A Pul

5.55. 2sk1587.pdf Size:889K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1587 1.70 0.1 ■ Features ● VDS (V) = 16V ● ID = 2 A ● RDS(ON) ＜ 0.5Ω (VGS = 4V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 0.8Ω (VGS = 2.5V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±16 Continuous Drain Current ID 2 A Puls

5.56. 2sk1589.pdf Size:925K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1589 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 100V ● ID = 0.1 A 1 2 ● RDS(ON) ＜ 30Ω (VGS = 4V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 ● RDS(ON) ＜ 25Ω (VGS = 10V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 1

5.57. 2sk1590.pdf Size:1239K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1590 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 60V 1 2 ● ID = 0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) ＜ 3Ω (VGS = 10V) ● RDS(ON) ＜ 6Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 6

5.58. 2sk1593.pdf Size:977K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1593 1.70 0.1 ■ Features ● VDS (V) = 100V ● ID = 0.5A ● RDS(ON) ＜ 6Ω (VGS = 4V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 5Ω (VGS = 10V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 0.5 A Puls

5.59. 2sk1582.pdf Size:1002K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1582 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 30V ● ID = 0.2 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) ＜ 5Ω (VGS = 4V) +0.1 1.9-0.1 ● RDS(ON) ＜ 3Ω (VGS = 10V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

5.60. 2sk1589-3.pdf Size:1205K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1589 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 100V ● ID = 0.1 A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) ＜ 30Ω (VGS = 4V) +0.1 1.9 -0.2 ● RDS(ON) ＜ 25Ω (VGS = 10V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volta

5.61. 2sk1581.pdf Size:976K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1581 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 16V ● ID = 0.2 A 1 2 ● RDS(ON) ＜ 5Ω (VGS = 2.5V) +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 ● RDS(ON) ＜ 3Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

5.62. 2sk1582-3.pdf Size:1254K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1582 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 30V ● ID = 0.2 A 1 2 ● RDS(ON) ＜ 5Ω (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 3Ω (VGS = 10V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage V

5.63. 2sk1581-3.pdf Size:1256K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1581 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 16V ● ID = 0.2 A 1 2 ● RDS(ON) ＜ 5Ω (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) ＜ 3Ω (VGS = 4V) 1.9 -0.2 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage V

5.64. 2sk1585.pdf Size:1290K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1585 1.70 0.1 ■ Features ● VDS (V) = 16V ● ID = 1 A 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 1Ω (VGS = 4V) ● RDS(ON) ＜ 1.2Ω (VGS = 2.5V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±16 Continuous Drain Current ID 1 A Pulsed

5.65. 2sk1588.pdf Size:1044K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1588 1.70 0.1 ■ Features ● VDS (V) = 16V ● ID = 3 A 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 0.3Ω (VGS = 4V) ● RDS(ON) ＜ 0.5Ω (VGS = 2.5V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±16 Continuous Drain Current ID 3 A Puls

5.66. 2sk1583.pdf Size:1170K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1583 1.70 0.1 ■ Features ● VDS (V) = 16V ● ID = 0.5 A 0.42 0.1 ● RDS(ON) ＜ 2Ω (VGS = 2.5V) 0.46 0.1 ● RDS(ON) ＜ 1.5Ω (VGS = 4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±16 Continuous Drain Current ID 0.5 A Pul

5.67. 2sk1586.pdf Size:1007K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1586 1.70 0.1 ■ Features ● VDS (V) = 30V ● ID = 1 A ● RDS(ON) ＜ 0.6Ω (VGS = 10V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 1Ω (VGS = 4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 1 A Pulsed

5.68. 2sk1590-3.pdf Size:1249K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1590 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 60V ● ID = 0.2 A 1 2 +0.02 +0.1 0.15 -0.02 ● RDS(ON) ＜ 3Ω (VGS = 10V) 0.95-0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 6Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD

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