2SK3650-01S Todos los transistores

 ..1. Size:356K  inchange semiconductor
 2sk3650-01s.pdf

isc N-Channel MOSFET Transistor 2SK3650-01S FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 0.1. Size:356K  inchange semiconductor
 2sk3650-01sj.pdf

isc N-Channel MOSFET Transistor 2SK3650-01SJ FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 4.1. Size:254K  fuji
 2sk3650-01l-s-sj.pdf

2SK3650-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 4.2. Size:283K  inchange semiconductor
 2sk3650-01l.pdf

isc N-Channel MOSFET Transistor 2SK3650-01L FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol