IRFBA22N50A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBA22N50A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 340 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 66 nS
Cossⓘ - Capacitancia de salida: 505 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: SUPER220
Búsqueda de reemplazo de IRFBA22N50A MOSFET
- Selecciónⓘ de transistores por parámetros
IRFBA22N50A datasheet
..1. Size:130K international rectifier
irfba22n50apbf.pdf 
PD-91886C IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply 500V 0.23 24A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage an
..2. Size:106K international rectifier
irfba22n50a.pdf 
PD-91866B IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23 24A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curr
9.1. Size:199K international rectifier
irfba1404ppbf.pdf 
PD - 95903A IRFBA1404PPbF HEXFET Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 40V Benefits RDS(on) = 3.7m l Advanced Process Technology G l Ultra Low On-Resistance ID = 206A l Increase Current Handling Capability S l 175 C Operating Temperature l Fast Switching l Dynamic dv/dt Rating l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Descri
9.2. Size:117K international rectifier
irfba90n20d.pdf 
PD - 94300A SMPS MOSFET IRFBA90N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023 98A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage Super-220 and Current Abso
9.3. Size:238K international rectifier
irfba1405p.pdf 
PD -94111 AUTOMOTIVE MOSFET IRFBA1405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control VDSS = 55V Power Door Benefits Advanced Process Technology RDS(on) = 5.0m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 174AV 175 C Operating Temperature S Fast Switching Repetitiv
9.4. Size:133K international rectifier
irfba90n20dpbf.pdf 
PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023 98A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Super-220 l Fully Characterized Avalanche Voltage and
9.5. Size:211K international rectifier
auirfba1405.pdf 
PD-97768 AUTOMOTIVE GRADE AUIRFBA1405 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 4.3m l Dynamic dv/dt Rating l 175 C Operating Temperature max 5.0m G l Fast Switching ID (Silicon Limited) 174A l Fully Avalanche Rated ID (Package Limited) 95A l Repetitive Avalanche Allowed S up to Tjmax l Lead-Free, RoHS
9.6. Size:41K international rectifier
irfba31n50l.pdf 
PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control 500V 0.152 31A UninterruptIble Power Supply Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and
9.7. Size:41K international rectifier
irfba32n50k.pdf 
PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.14 32A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo
9.8. Size:53K international rectifier
irfba34n50c.pdf 
PD- 93931 PROVISIONAL IRFBA34N50C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.070 40A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-220
9.9. Size:216K international rectifier
irfba1405ppbf.pdf 
PD -95152A IRFBA1405PPbF Typical Applications Industrial Motor Drive HEXFET Power MOSFET D Benefits VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.0m l Dynamic dv/dt Rating G l 175 C Operating Temperature l Fast Switching ID = 174A S l Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFETs uti
9.10. Size:48K international rectifier
irfba35n60c.pdf 
PD - 93800A PROVISIONAL IRFBA35N60C SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080 35A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Avalanche Voltage and Current Sup
9.11. Size:115K international rectifier
irfba1404.pdf 
PD - 93806 AUTOMOTIVE MOSFET IRFBA1404P Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric Braking D VDSS = 40V Radiator Fan Control Benefits Advanced Process Technology RDS(on) = 3.7m Ultra Low On-Resistance G Increase Current Handling Capability ID = 206A 175 C Operating Temperature S Fast Switchi
Otros transistores... IRF9Z34NS
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History: IRFE9210
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