All MOSFET. IRFBA22N50A Datasheet

 

IRFBA22N50A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFBA22N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 340 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 114(max) nC
   trⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 505 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SUPER220

 IRFBA22N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBA22N50A Datasheet (PDF)

Datasheet: IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A , IRFBA1404 , 13N50 , IRFBA35N60C , IRFBC20 , IRFBC20L , IRFBC20S , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L .

 

 
Back to Top