2SK3914-01 Todos los transistores

 ..1. Size:205K  fuji
 2sk3914-01.pdf

2SK3914-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless

 ..2. Size:289K  inchange semiconductor
 2sk3914-01.pdf

isc N-Channel MOSFET Transistor 2SK3914-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:167K  1
 2sk3919 2sk3919-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3919-ZK TO-252 (MP-3ZK) applications such as DC/DC co

 8.2. Size:193K  toshiba
 2sk3911.pdf

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 500 A (VDS = 600 V) Enhancement model Vth = 2

 8.3. Size:160K  nec
 2sk3918.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co

 8.4. Size:207K  fuji
 2sk3915-01mr.pdf

2SK3915-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.5. Size:121K  fuji
 2sk3917-01mr.pdf

2SK3917-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.6. Size:206K  fuji
 2sk3916-01.pdf

2SK3916-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless

 8.7. Size:190K  fuji
 2sk3913-01mr.pdf

2SK3913-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 8.8. Size:97K  tysemi
 2sk3919.pdf

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3919 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 +0.8 5.30+0.2 0.50-0.7 -0.2 Features Low on-state resistance RDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A) 0.127 Low Ciss Ciss = 2050 pF TYP. 0.80+0.1 max -0.1 5 V drive available 2.3 0.60+0.1 1Gate -0.1 +0.15 4.60-0.15 2Drain 3Source

 8.9. Size:355K  inchange semiconductor
 2sk3918.pdf

isc N-Channel MOSFET Transistor 2SK3918 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:287K  inchange semiconductor
 2sk3918-zk.pdf

isc N-Channel MOSFET Transistor 2SK3918-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.11. Size:280K  inchange semiconductor
 2sk3915-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3915-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.12. Size:286K  inchange semiconductor
 2sk3911.pdf

isc N-Channel MOSFET Transistor 2SK3911 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.32 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:280K  inchange semiconductor
 2sk3917-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3917-01MR FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.14. Size:289K  inchange semiconductor
 2sk3916-01.pdf

isc N-Channel MOSFET Transistor 2SK3916-01 FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.15. Size:354K  inchange semiconductor
 2sk3919.pdf

isc N-Channel MOSFET Transistor 2SK3919 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.16. Size:286K  inchange semiconductor
 2sk3919-zk.pdf

isc N-Channel MOSFET Transistor 2SK3919-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.17. Size:280K  inchange semiconductor
 2sk3913-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3913-01MR FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol