2SK3914-01 PDF and Equivalents Search

 

2SK3914-01 Specs and Replacement

Type Designator: 2SK3914-01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220AB

2SK3914-01 substitution

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2SK3914-01 datasheet

 ..1. Size:205K  fuji
2sk3914-01.pdf pdf_icon

2SK3914-01

2SK3914-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒

 ..2. Size:289K  inchange semiconductor
2sk3914-01.pdf pdf_icon

2SK3914-01

isc N-Channel MOSFET Transistor 2SK3914-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.1. Size:167K  1
2sk3919 2sk3919-zk.pdf pdf_icon

2SK3914-01

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3919-ZK TO-252 (MP-3ZK) applications such as DC/DC co... See More ⇒

 8.2. Size:193K  toshiba
2sk3911.pdf pdf_icon

2SK3914-01

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 500 A (VDS = 600 V) Enhancement model Vth = 2... See More ⇒

Detailed specifications: 2SK3882-01, 2SK3883-01, 2SK3884-01, 2SK3885-01, 2SK3886-01MR, 2SK3887-01, 2SK3888-01MR, 2SK3913-01MR, IRFP250N, 2SK3915-01MR, 2SK3916-01, 2SK3917-01MR, 2SK2755-01, 2SK2756-01R, 2SK2759-01R, 2SK2760-01, 2SK2764-01R

Keywords - 2SK3914-01 MOSFET specs

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