2SK3730-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK3730-01MRFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 7.9m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Unit: mm Applications High breakdown voltage: VGDS = -100 V (min) High input impedance: I = -1.0 nA (max) (V = -80 V) GSS GSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-drain voltage VGDS -100 V Gate

2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source1S23Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Ordering number : EN7671A2SK3738N-Channel JFEThttp://onsemi.com40V, 50 to 130 A, 0.13mS, SMCPApplications Impedance conversion Infrared sensorFeatures Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slimSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltag

SMD Type ICSMD Type TransistorsN-channel enhancement mode MOSFET2SK3731TO-263Unit: mm+0.24.57-0.2Features1.27+0.1-0.1Low on-resistance, low QgHigh avalanche resistanceFor high-speed switching0.1max1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

isc N-Channel MOSFET Transistor 2SK3736FEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max) @ V = 4VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi