2SK3730-01MR Specs and Replacement
Type Designator: 2SK3730-01MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TO220F
2SK3730-01MR substitution
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2SK3730-01MR datasheet
2sk3730-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3730-01MR FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒
2sk373.pdf
2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Unit mm Applications High breakdown voltage VGDS = -100 V (min) High input impedance I = -1.0 nA (max) (V = -80 V) GSS GS Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -100 V Gate... See More ⇒
2sk3736.pdf
2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain ... See More ⇒
Detailed specifications: 2SK3535-01, 2SK3537-01MR, 2SK3692-01, 2SK3693-01MR, 2SK3725-01, 2SK3726-01MR, 2SK3727-01, 2SK3728-01MR, 20N50, 2SK3769-01MR, 2SK3770-01MR, 2SK3771-01MR, 2SK3772-01, 2SK3773-01MR, 2SK3776-01, 2SK3778-01, 2SK3780-01
Keywords - 2SK3730-01MR MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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