2SK3789-01R Todos los transistores

 

2SK3789-01R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3789-01R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 210 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 92 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 112 nS

Cossⓘ - Capacitancia de salida: 530 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO3PF

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2SK3789-01R datasheet

 ..1. Size:95K  fuji
 2sk3789-01r.pdf pdf_icon

2SK3789-01R

2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless o

 8.1. Size:110K  nec
 2sk3782.pdf pdf_icon

2SK3789-01R

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3782 is suitable for converter of ECM. 1.2 0.1 +0.1 0.3 0.05 MAX. 0.33 FEATURES High gain 3 0 to 0.02 -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k ) Low noise 2 1 -109 dB (V

 8.2. Size:112K  nec
 2sk3783.pdf pdf_icon

2SK3789-01R

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3783 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3783 is suitable for converter of ECM. 1.0 FEATURES High gain -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k ) Low noise -109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k ) Super small

 8.3. Size:102K  fuji
 2sk3781-01r.pdf pdf_icon

2SK3789-01R

2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless o

MOSTRAR MÁS

Otros transistores... 2SK3771-01MR , 2SK3772-01 , 2SK3773-01MR , 2SK3776-01 , 2SK3778-01 , 2SK3780-01 , 2SK3781-01R , 2SK3788-01 , STP65NF06 , 2SK3753-01R , 2SK727 , 2SK770 , 2SK773 , 2SK774 , 2SK791 , 2SK792 , 2SK794 .

History: WML26N65C4 | 2SK1764 | 2SK4065-DL-1E

 

 

 

 

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