All MOSFET. 2SK3789-01R Datasheet

 

2SK3789-01R Datasheet and Replacement


   Type Designator: 2SK3789-01R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO3PF
 

 2SK3789-01R substitution

   - MOSFET ⓘ Cross-Reference Search

 

2SK3789-01R Datasheet (PDF)

 ..1. Size:95K  fuji
 2sk3789-01r.pdf pdf_icon

2SK3789-01R

2SK3789-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o

 8.1. Size:110K  nec
 2sk3782.pdf pdf_icon

2SK3789-01R

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3782N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3782 is suitable for converter of ECM. 1.2 0.1 +0.10.3 0.05 MAX. 0.33FEATURES High gain 30 to 0.02 -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise 2 1 -109 dB (V

 8.2. Size:112K  nec
 2sk3783.pdf pdf_icon

2SK3789-01R

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3783N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3783 is suitable for converter of ECM. 1.0FEATURES High gain -0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k) Low noise -109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k) Super small

 8.3. Size:102K  fuji
 2sk3781-01r.pdf pdf_icon

2SK3789-01R

2SK3781-01RN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless o

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - 2SK3789-01R MOSFET datasheet

 2SK3789-01R cross reference
 2SK3789-01R equivalent finder
 2SK3789-01R lookup
 2SK3789-01R substitution
 2SK3789-01R replacement

 

 
Back to Top

 


 
.