2SK351 Todos los transistores

 ..1. Size:221K  hitachi
 2sk351.pdf

 ..2. Size:299K  inchange semiconductor
 2sk351.pdf

isc N-Channel MOSFET Transistor 2SK351 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 0.1. Size:213K  renesas
 2sk3511-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:214K  renesas
 2sk3510-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.3. Size:104K  fuji
 2sk3517-01.pdf

FUJI POWER MOSFET200303 2SK3517-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 0.4. Size:106K  fuji
 2sk3518-01mr.pdf

FUJI POWER MOSFET200303 2SK3518-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 0.5. Size:96K  fuji
 2sk3515-01mr.pdf

FUJI POWER MOSFET200303 2SK3515-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 0.6. Size:100K  fuji
 2sk3519-01.pdf

FUJI POWER MOSFET200303 2SK3519-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 0.7. Size:93K  fuji
 2sk3514-01.pdf

FUJI POWER MOSFET200303 2SK3514-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles

 0.8. Size:259K  fuji
 2sk3513-01l-s-sj.pdf

2SK3513-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl

 0.9. Size:250K  fuji
 2sk3516-01l-s-sj.pdf

2SK3516-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle

 0.10. Size:308K  fuji
 2sk3512-01l-s-sj.pdf

http //www.fujielectric.com/products/semiconductor/ 2SK3512-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators P4 UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteris

 0.11. Size:289K  inchange semiconductor
 2sk3517-01.pdf

isc N-Channel MOSFET Transistor 2SK3517-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.12. Size:279K  inchange semiconductor
 2sk3518-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3518-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.13. Size:357K  inchange semiconductor
 2sk3510-zj.pdf

isc N-Channel MOSFET Transistor 2SK3510-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 0.14. Size:288K  inchange semiconductor
 2sk3511.pdf

isc N-Channel MOSFET Transistor 2SK3511 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.15. Size:279K  inchange semiconductor
 2sk3515-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3515-01MR FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 0.16. Size:357K  inchange semiconductor
 2sk3513s.pdf

isc N-Channel MOSFET Transistor 2SK3513S FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.17. Size:283K  inchange semiconductor
 2sk3513l.pdf

isc N-Channel MOSFET Transistor 2SK3513L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.18. Size:357K  inchange semiconductor
 2sk3511-z.pdf

isc N-Channel MOSFET Transistor 2SK3511-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 0.19. Size:282K  inchange semiconductor
 2sk3510-s.pdf

isc N-Channel MOSFET Transistor 2SK3510-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 0.20. Size:288K  inchange semiconductor
 2sk3510.pdf

isc N-Channel MOSFET Transistor 2SK3510 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.21. Size:289K  inchange semiconductor
 2sk3519-01.pdf

isc N-Channel MOSFET Transistor 2SK3519-01 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.22. Size:356K  inchange semiconductor
 2sk3510-z.pdf

isc N-Channel MOSFET Transistor 2SK3510-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 0.23. Size:283K  inchange semiconductor
 2sk3512l.pdf

isc N-Channel MOSFET Transistor 2SK3512L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.24. Size:289K  inchange semiconductor
 2sk3514-01.pdf

isc N-Channel MOSFET Transistor 2SK3514-01 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.25. Size:357K  inchange semiconductor
 2sk3512s.pdf

isc N-Channel MOSFET Transistor 2SK3512S FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.26. Size:357K  inchange semiconductor
 2sk3511-zj.pdf

isc N-Channel MOSFET Transistor 2SK3511-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 0.27. Size:282K  inchange semiconductor
 2sk3511-s.pdf

isc N-Channel MOSFET Transistor 2SK3511-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole