2SK351 Specs and Replacement
Type Designator: 2SK351
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 320
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
TO3
-
MOSFET ⓘ Cross-Reference Search
2SK351 datasheet
..2. Size:299K inchange semiconductor
2sk351.pdf 
isc N-Channel MOSFET Transistor 2SK351 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒
0.1. Size:213K renesas
2sk3511-s-z-zj.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
0.2. Size:214K renesas
2sk3510-s-z-zj.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
0.3. Size:104K fuji
2sk3517-01.pdf 
FUJI POWER MOSFET200303 2SK3517-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
0.4. Size:106K fuji
2sk3518-01mr.pdf 
FUJI POWER MOSFET200303 2SK3518-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
0.5. Size:96K fuji
2sk3515-01mr.pdf 
FUJI POWER MOSFET200303 2SK3515-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
0.6. Size:100K fuji
2sk3519-01.pdf 
FUJI POWER MOSFET200303 2SK3519-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
0.7. Size:93K fuji
2sk3514-01.pdf 
FUJI POWER MOSFET200303 2SK3514-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
0.8. Size:259K fuji
2sk3513-01l-s-sj.pdf 
2SK3513-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒
0.9. Size:250K fuji
2sk3516-01l-s-sj.pdf 
2SK3516-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
0.10. Size:308K fuji
2sk3512-01l-s-sj.pdf 
http //www.fujielectric.com/products/semiconductor/ 2SK3512-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators P4 UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteris... See More ⇒
0.11. Size:289K inchange semiconductor
2sk3517-01.pdf 
isc N-Channel MOSFET Transistor 2SK3517-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
0.12. Size:279K inchange semiconductor
2sk3518-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3518-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
0.13. Size:357K inchange semiconductor
2sk3510-zj.pdf 
isc N-Channel MOSFET Transistor 2SK3510-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
0.14. Size:288K inchange semiconductor
2sk3511.pdf 
isc N-Channel MOSFET Transistor 2SK3511 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
0.15. Size:279K inchange semiconductor
2sk3515-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3515-01MR FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
0.16. Size:357K inchange semiconductor
2sk3513s.pdf 
isc N-Channel MOSFET Transistor 2SK3513S FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
0.17. Size:283K inchange semiconductor
2sk3513l.pdf 
isc N-Channel MOSFET Transistor 2SK3513L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
0.18. Size:357K inchange semiconductor
2sk3511-z.pdf 
isc N-Channel MOSFET Transistor 2SK3511-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
0.19. Size:282K inchange semiconductor
2sk3510-s.pdf 
isc N-Channel MOSFET Transistor 2SK3510-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
0.20. Size:288K inchange semiconductor
2sk3510.pdf 
isc N-Channel MOSFET Transistor 2SK3510 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
0.21. Size:289K inchange semiconductor
2sk3519-01.pdf 
isc N-Channel MOSFET Transistor 2SK3519-01 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
0.22. Size:356K inchange semiconductor
2sk3510-z.pdf 
isc N-Channel MOSFET Transistor 2SK3510-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
0.23. Size:283K inchange semiconductor
2sk3512l.pdf 
isc N-Channel MOSFET Transistor 2SK3512L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
0.24. Size:289K inchange semiconductor
2sk3514-01.pdf 
isc N-Channel MOSFET Transistor 2SK3514-01 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
0.25. Size:357K inchange semiconductor
2sk3512s.pdf 
isc N-Channel MOSFET Transistor 2SK3512S FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
0.26. Size:357K inchange semiconductor
2sk3511-zj.pdf 
isc N-Channel MOSFET Transistor 2SK3511-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
0.27. Size:282K inchange semiconductor
2sk3511-s.pdf 
isc N-Channel MOSFET Transistor 2SK3511-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 2SK770
, 2SK773
, 2SK774
, 2SK791
, 2SK792
, 2SK794
, 2SK795
, 2SK382
, EMB04N03H
, 2SK1074
, 2SK1079
, 2SK1089
, 2SK1105-R
, 2SK1171
, 2SK1171-01
, 2SK1172
, 2SK1172-01
.
Keywords - 2SK351 MOSFET specs
2SK351 cross reference
2SK351 equivalent finder
2SK351 pdf lookup
2SK351 substitution
2SK351 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.