2SK1280 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1280
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 150 nS
Conductancia de drenaje-sustrato (Cd): 300 pF
Resistencia drenaje-fuente RDS(on): 0.5 Ohm
Empaquetado / Estuche: TO3P
Búsqueda de reemplazo de MOSFET 2SK1280
2SK1280 Datasheet (PDF)
0.1. 2sk1280.pdf 
Size:267K _fuji
FUJI POWER MOSFET2SK1280N-CHANNEL SILICON POWER MOSFETF- V SERIESFeatures Outline DrawingsInclude fast recovery diodeTO-3PHigh voltageLow driving powerApplications Motor controllersInverters Choppers3. SourceJEDECSC-65EIAJMaximum ratings and characteristicsEquivalent circuit schematic Absolute maximum ratings ( Tc=25C unless otherwise specified)Item Sym
0.2. 2sk1280.pdf Size:203K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK1280DESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.1. 2sk1288.pdf Size:379K _nec
8.2. 2sk1282 2sk1282-z.pdf Size:379K _nec
8.3. 2sk1284 2sk1284-z.pdf Size:381K _nec
8.4. 2sk1286.pdf Size:381K _nec
8.5. 2sk1287.pdf Size:349K _nec
8.6. 2sk1289.pdf Size:347K _nec
8.7. 2sk1282-z.pdf Size:386K _nec
8.8. 2sk1285.pdf Size:300K _nec
DATA SHEETN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR2SK1285SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX.3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.32 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 MAX.
8.9. 2sk1283.pdf Size:288K _nec
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1283SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX.solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2
8.10. 2sk1284-z.pdf Size:1661K _kexin
SMD Type ICSMD Type MOSFETN-Channel MOSFET2SK1284-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8Features0.50 -0.7Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2A0.127+0.10.80-0.1maxLow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection Diode+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 SourceA
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
