2SK1280 Todos los transistores

FUJI POWER MOSFET 2SK1280 N-CHANNEL SILICON POWER MOSFET F- V SERIES Features Outline Drawings Include fast recovery diode TO-3P High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC SC-65 EIAJ Maximum ratings and characteristics Equivalent circuit schematic Absolute maximum ratings ( Tc=25 C unless otherwise specified) Item Sym

isc N-Channel MOSFET Transistor 2SK1280 DESCRIPTION Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX. solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX. FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2

DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX. 3.2 0.2 2.8 MAX. FEATURES Low on-state resistance RDS(on) = 0.32 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 MAX.

SMD Type IC SMD Type MOSFET N-Channel MOSFET 2SK1284-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A 0.127 +0.1 0.80-0.1 max Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Drain 3 Source A