2SK1280 Todos los transistores

 

2SK1280 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1280

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 150 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: TO3P

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2SK1280 Datasheet (PDF)

0.1. 2sk1280.pdf Size:267K _fuji

2SK1280
2SK1280

FUJI POWER MOSFET2SK1280N-CHANNEL SILICON POWER MOSFETF- V SERIESFeatures Outline DrawingsInclude fast recovery diodeTO-3PHigh voltageLow driving powerApplications Motor controllersInverters Choppers3. SourceJEDECSC-65EIAJMaximum ratings and characteristicsEquivalent circuit schematic Absolute maximum ratings ( Tc=25C unless otherwise specified)Item Sym

0.2. 2sk1280.pdf Size:203K _inchange_semiconductor

2SK1280
2SK1280

isc N-Channel MOSFET Transistor 2SK1280DESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV

 8.1. 2sk1288.pdf Size:379K _nec

2SK1280
2SK1280

8.2. 2sk1282 2sk1282-z.pdf Size:379K _nec

2SK1280
2SK1280

 8.3. 2sk1284 2sk1284-z.pdf Size:381K _nec

2SK1280
2SK1280

8.4. 2sk1286.pdf Size:381K _nec

2SK1280
2SK1280

 8.5. 2sk1287.pdf Size:349K _nec

2SK1280
2SK1280

8.6. 2sk1289.pdf Size:347K _nec

2SK1280
2SK1280

8.7. 2sk1282-z.pdf Size:386K _nec

2SK1280
2SK1280

8.8. 2sk1285.pdf Size:300K _nec

2SK1280
2SK1280

DATA SHEETN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR2SK1285SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX.3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.32 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 MAX.

8.9. 2sk1283.pdf Size:288K _nec

2SK1280
2SK1280

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1283SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX.solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2

8.10. 2sk1284-z.pdf Size:1661K _kexin

2SK1280
2SK1280

SMD Type ICSMD Type MOSFETN-Channel MOSFET2SK1284-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8Features0.50 -0.7Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2A0.127+0.10.80-0.1maxLow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection Diode+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 SourceA

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