All MOSFET. 2SK1280 Datasheet

 

2SK1280 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1280
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO3P

 2SK1280 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1280 Datasheet (PDF)

 ..1. Size:267K  fuji
2sk1280.pdf

2SK1280
2SK1280

FUJI POWER MOSFET2SK1280N-CHANNEL SILICON POWER MOSFETF- V SERIESFeatures Outline DrawingsInclude fast recovery diodeTO-3PHigh voltageLow driving powerApplications Motor controllersInverters Choppers3. SourceJEDECSC-65EIAJMaximum ratings and characteristicsEquivalent circuit schematic Absolute maximum ratings ( Tc=25C unless otherwise specified)Item Sym

 ..2. Size:203K  inchange semiconductor
2sk1280.pdf

2SK1280
2SK1280

isc N-Channel MOSFET Transistor 2SK1280DESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV

 8.1. Size:288K  nec
2sk1283.pdf

2SK1280
2SK1280

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1283SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX.solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2

 8.2. Size:379K  nec
2sk1282 2sk1282-z.pdf

2SK1280
2SK1280

 8.3. Size:386K  nec
2sk1282-z.pdf

2SK1280
2SK1280

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2sk1285.pdf

2SK1280
2SK1280

DATA SHEETN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR2SK1285SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX.3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.32 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 MAX.

 8.5. Size:347K  nec
2sk1289.pdf

2SK1280
2SK1280

 8.6. Size:349K  nec
2sk1287.pdf

2SK1280
2SK1280

 8.7. Size:381K  nec
2sk1284 2sk1284-z.pdf

2SK1280
2SK1280

 8.8. Size:379K  nec
2sk1288.pdf

2SK1280
2SK1280

 8.9. Size:381K  nec
2sk1286.pdf

2SK1280
2SK1280

 8.10. Size:1661K  kexin
2sk1284-z.pdf

2SK1280
2SK1280

SMD Type ICSMD Type MOSFETN-Channel MOSFET2SK1284-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8Features0.50 -0.7Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2A0.127+0.10.80-0.1maxLow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection Diode+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 SourceA

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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