2SK1280 MOSFET Datasheet: N-Ch, 500V, 18A. Full specification with pinout and replacement list

2SK1280 Specs and Replacement

Type Designator: 2SK1280

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO3P

2SK1280 substitution

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2SK1280 datasheet

..1. Size:267K fuji
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FUJI POWER MOSFET 2SK1280 N-CHANNEL SILICON POWER MOSFET F- V SERIES Features Outline Drawings Include fast recovery diode TO-3P High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC SC-65 EIAJ Maximum ratings and characteristics Equivalent circuit schematic Absolute maximum ratings ( Tc=25 C unless otherwise specified) Item Sym... See More ⇒

..2. Size:203K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1280 DESCRIPTION Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V ... See More ⇒

8.1. Size:288K nec
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX. solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX. FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2 ... See More ⇒

8.2. Size:379K nec
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