2SK1280 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1280
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3P
2SK1280 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1280 Datasheet (PDF)
2sk1280.pdf
FUJI POWER MOSFET2SK1280N-CHANNEL SILICON POWER MOSFETF- V SERIESFeatures Outline DrawingsInclude fast recovery diodeTO-3PHigh voltageLow driving powerApplications Motor controllersInverters Choppers3. SourceJEDECSC-65EIAJMaximum ratings and characteristicsEquivalent circuit schematic Absolute maximum ratings ( Tc=25C unless otherwise specified)Item Sym
2sk1280.pdf
isc N-Channel MOSFET Transistor 2SK1280DESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
2sk1283.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1283SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX.solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2
2sk1285.pdf
DATA SHEETN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR2SK1285SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX.3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.32 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 MAX.
2sk1284-z.pdf
SMD Type ICSMD Type MOSFETN-Channel MOSFET2SK1284-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8Features0.50 -0.7Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2A0.127+0.10.80-0.1maxLow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection Diode+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 SourceA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
