2SK3666-3-TB-E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3666Ordering number : EN8158BSANYO SemiconductorsDATA SHEETN-Channel Junctin Silicon FETLow-Frequency General-Purpose Amplifier,2SK3666Impedance Converter ApplicationsApplications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applicationsFeatures Small IGSS Small CissSpecifications at Ta=25CAbsolute Maximum RatingsPa

Ordering number : EN8158B2SK3666N-Channel JFEThttp://onsemi.com30V, 0.6 to 6.0mA, 6.5mS, CPApplications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applicationsFeatures Small IGSS Small CissSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSX 30 VGate-to-Drai

2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current Unit: mmand Impedance Converter Applications High voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA) Small package Complementary to 2SJ107 Absolute

2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII) 2SK3662 Switching Regulator, DC-DC Converter, Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 9.4 m (typ.) High forward transfer admittance: |Y | = 55 S (typ.) fs Low leakage current: I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3 to

2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) 2SK3669 Switching Regulators, for Audio Amplifier and Motor Unit: mmDrive Applications Low drain-source ON resistance: RDS (ON) = 95 m (typ.) High forward transfer admittance: |Y | = 6 S (typ.) fs Low leakage current: I = 100 A (max) (V = 100 V) DSS DS Enhancement-mode : Vth

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3667 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (

DATA SHEETMOS FIELD EFFECT TRANSISTOR 2SK3664N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. 0.3 +0.100.15+0.10.05 The device features a low on-state resistance and excellent switching characteristics, and is suitable for applicat

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3663N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3663 is a switching device which can be driven directlyby a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications such aspower switch of portable machi

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3668SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTIONORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance, low charge andexcellent switching characteristics, designed for high2SK3668-ZK TO-263 (MP-25ZK)voltage applications such as high intensity dischargelamp drive.(T

2SK3663www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECA