2SK3666-3-TB-E - описание и поиск аналогов

2SK3666 Ordering number EN8158B SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET Low-Frequency General-Purpose Amplifier, 2SK3666 Impedance Converter Applications Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Small IGSS Small Ciss Specifications at Ta=25 C Absolute Maximum Ratings Pa

Ordering number EN8158B 2SK3666 N-Channel JFET http //onsemi.com 30V, 0.6 to 6.0mA, 6.5mS, CP Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features Small IGSS Small Ciss Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 30 V Gate-to-Drai

2SK366 TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current Unit mm and Impedance Converter Applications High voltage VGDS = -40 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON) RDS (ON) = 50 (typ.) (IDSS = 5 mA) Small package Complementary to 2SJ107 Absolute

2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII) 2SK3662 Switching Regulator, DC-DC Converter, Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 9.4 m (typ.) High forward transfer admittance Y = 55 S (typ.) fs Low leakage current I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode Vth = 1.3 to

2SK3669 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) 2SK3669 Switching Regulators, for Audio Amplifier and Motor Unit mm Drive Applications Low drain-source ON resistance RDS (ON) = 95 m (typ.) High forward transfer admittance Y = 6 S (typ.) fs Low leakage current I = 100 A (max) (V = 100 V) DSS DS Enhancement-mode Vth

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3667 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 5.5S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3664 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3664 is a switching device, which can be driven directly by a 2.5 V power source. 0.3 +0.1 0 0.15+0.1 0.05 The device features a low on-state resistance and excellent switching characteristics, and is suitable for applicat

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3663 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3663 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3663 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machi

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3668 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3668 is N-channel DMOS FET device that PART NUMBER PACKAGE features a low on-state resistance, low charge and excellent switching characteristics, designed for high 2SK3668-ZK TO-263 (MP-25ZK) voltage applications such as high intensity discharge lamp drive. (T

2SK3663 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC A