2SK3943-ZP Todos los transistores

 

2SK3943-ZP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3943-ZP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 82 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 860 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO263

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2SK3943-ZP datasheet

 ..1. Size:258K  renesas
2sk3943-zp.pdf pdf_icon

2SK3943-ZP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:357K  inchange semiconductor
2sk3943-zp.pdf pdf_icon

2SK3943-ZP

isc N-Channel MOSFET Transistor 2SK3943-ZP FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:188K  toshiba
2sk3940.pdf pdf_icon

2SK3943-ZP

2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 5.6 m (typ.) High forward transfer admittance Yfs = 90 S (typ.) Low leakage current IDSS = 100 A (VDS = 75 V) Enhancement-mode Vth = 3.0 to

 8.2. Size:182K  toshiba
2sk3947.pdf pdf_icon

2SK3943-ZP

2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3947 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) High forward transfer admittance Yfs = 5.0S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

Otros transistores... 2SK3546J , 2SK3547 , 2SK3557-6-TB-E , 2SK3557-7-TB-E , 2SK3652 , 2SK3659 , 2SK3666-2-TB-E , 2SK3666-3-TB-E , SKD502T , 2SK3715 , 2SK3723 , 2SK3731 , 2SK3738 , 2SK3748-1E , 2SK3755 , 2SK3758 , 2SK1206 .

History: ZXMP10A16KTC | DG2N65-252 | ZXMP6A16DN8 | 2SK1237 | L1N60 | CM8N80 | PJW4N06A-AU

 

 

 

 

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