2SK3943-ZP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3943-ZP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 82 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 860 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO263
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2SK3943-ZP datasheet
2sk3943-zp.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3943-zp.pdf
isc N-Channel MOSFET Transistor 2SK3943-ZP FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
2sk3940.pdf
2SK3940 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3940 Switching Regulator, DC/DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON-resistance RDS (ON) = 5.6 m (typ.) High forward transfer admittance Yfs = 90 S (typ.) Low leakage current IDSS = 100 A (VDS = 75 V) Enhancement-mode Vth = 3.0 to
2sk3947.pdf
2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3947 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.1 (typ.) High forward transfer admittance Yfs = 5.0S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
Otros transistores... 2SK3546J , 2SK3547 , 2SK3557-6-TB-E , 2SK3557-7-TB-E , 2SK3652 , 2SK3659 , 2SK3666-2-TB-E , 2SK3666-3-TB-E , SKD502T , 2SK3715 , 2SK3723 , 2SK3731 , 2SK3738 , 2SK3748-1E , 2SK3755 , 2SK3758 , 2SK1206 .
History: ZXMP10A16KTC | DG2N65-252 | ZXMP6A16DN8 | 2SK1237 | L1N60 | CM8N80 | PJW4N06A-AU
History: ZXMP10A16KTC | DG2N65-252 | ZXMP6A16DN8 | 2SK1237 | L1N60 | CM8N80 | PJW4N06A-AU
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