2SK1222 Todos los transistores

 

2SK1222 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1222

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.55 Ohm

Empaquetado / Estuche: TO3PN

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2SK1222 Datasheet (PDF)

1.1. 2sk1222.pdf Size:61K _upd

2SK1222
2SK1222

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1222 DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag

4.1. 2sk1225 2sk1206.pdf Size:89K _update

2SK1222
2SK1222



4.2. 2sk1224.pdf Size:63K _upd

2SK1222
2SK1222

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1224 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage

 4.3. 2sk1228.pdf Size:34K _panasonic

2SK1222
2SK1222

Silicon MOS FETs (Small Signal) 2SK1228 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDS 50 V 0.4 0.2 Gat

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