2SK1222
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1222
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55
Ohm
Package:
TO3PN
2SK1222
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1222
Datasheet (PDF)
..1. Size:61K inchange semiconductor
2sk1222.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1222 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag
8.1. Size:249K 1
2sk1221.pdf
FUJI POWER MOSFET2SK1221N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS=30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaximum ra
8.2. Size:34K panasonic
2sk1228.pdf
Silicon MOS FETs (Small Signal) 2SK12282SK1228Silicon N-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Wide frequency band Gate-protection diode built-in3 2.5V drive possible2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Drain-Source voltage VDS 50 V0.4
8.4. Size:63K inchange semiconductor
2sk1224.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1224 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage
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