2SK520 Todos los transistores

 ..1. Size:55K  no
 2sk520.pdf

 9.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 9.2. Size:133K  toshiba
 2sk526.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:94K  toshiba
 2sk525.pdf

 9.4. Size:36K  hitachi
 2sk522.pdf

2SK522 Silicon N-Channel Junction FET Application VHF amplifier, Mixer, local oscillator Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK522 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 30 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temperature Tch 150 C Storage temperature T

 9.5. Size:235K  inchange semiconductor
 2sk528.pdf

isc N-Channel MOSFET Transistor 2SK528 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c

 9.6. Size:234K  inchange semiconductor
 2sk526.pdf

isc N-Channel MOSFET Transistor 2SK526 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies

 9.7. Size:234K  inchange semiconductor
 2sk525.pdf

isc N-Channel MOSFET Transistor 2SK525 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies

 9.8. Size:235K  inchange semiconductor
 2sk529.pdf

isc N-Channel MOSFET Transistor 2SK529 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c