2SK520 Datasheet and Replacement
Type Designator: 2SK520
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 0.05
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50
Ohm
Package: MINIMOLD
-
MOSFET ⓘ Cross-Reference Search
2SK520 Datasheet (PDF)
9.2. Size:133K toshiba
2sk526.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.4. Size:36K hitachi
2sk522.pdf 
2SK522Silicon N-Channel Junction FETApplicationVHF amplifier, Mixer, local oscillatorOutlineSPAK1. Gate122. Source33. Drain2SK522Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temperature Tch 150 CStorage temperature T
9.5. Size:235K inchange semiconductor
2sk528.pdf 
isc N-Channel MOSFET Transistor 2SK528DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.6. Size:234K inchange semiconductor
2sk526.pdf 
isc N-Channel MOSFET Transistor 2SK526DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies
9.7. Size:234K inchange semiconductor
2sk525.pdf 
isc N-Channel MOSFET Transistor 2SK525DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies
9.8. Size:235K inchange semiconductor
2sk529.pdf 
isc N-Channel MOSFET Transistor 2SK529DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =450V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Datasheet: 2SK1685
, 2SK1686
, 2SK1694
, 2SK1695
, 2SK1696
, 2SK387
, 2SK388
, 2SK513
, 13N50
, 2SK277
, 2SK278
, 2SK293
, 2SK298
, 2SK299
, 2SK1805
, 2SK3804-01S
, 2SK1819-01MR
.
History: AOW29S50
| AO4862E
Keywords - 2SK520 MOSFET datasheet
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