2SK277 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK277
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 350 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET 2SK277

2SK277 Datasheet (PDF)

..1. Size:36K nec
2sk277 2sk278.pdf

0.1. Size:95K 1
2sk2778 2sk2779.pdf

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 2502SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

0.2. Size:444K toshiba
2sk2776.pdf

2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (V

0.3. Size:425K toshiba
2sk2777.pdf

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (--MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V

0.4. Size:40K sanyo
2sk2775.pdf

Ordering number:ENN6392N-Channel Silicon MOSFET2SK2775Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 4V drive.[2SK2775] Enables simplified fabrication, high-density mount-8.2ing, and miniaturization in end products due to the7.86.20.6surface mountable package.31 20.3

0.5. Size:23K panasonic
2sk2772.pdf

Power F-MOS FETs 2SK27722SK2772(Tentative)Silicon N-Channel MOSUnit : mmFor high-speed switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1 High-speed switching High drain-source voltage (VDSS)1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25C)1 : Gate1 2 32 : DrainParameter Symbol Rating UnitMarking3

0.6. Size:199K fuji
2sk2771-01r.pdf

0.7. Size:129K fuji
2sk2770-01.pdf

FUJI POWER MOSFET2SK2770-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC convertersEIAJ SC-65Maximum ratings and characteristicAbsolute maximum ratingsEqui

0.8. Size:199K no
2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf

0.9. Size:203K inchange semiconductor
2sk2777.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2777FEATURESWith TO-263(D2PAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

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