2SK277 Datasheet. Specs and Replacement

Type Designator: 2SK277  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO3

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2SK277 datasheet

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2SK277

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2SK277

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 250 2SK2701A 450 30 7 28 35 130 100 30 100 450 2.0 ... See More ⇒

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2SK277

2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON-resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (V... See More ⇒

 0.3. Size:425K  toshiba
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2SK277

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( --MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Y = 5.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V ... See More ⇒

Detailed specifications: 2SK1686, 2SK1694, 2SK1695, 2SK1696, 2SK387, 2SK388, 2SK513, 2SK520, RFP50N06, 2SK278, 2SK293, 2SK298, 2SK299, 2SK1805, 2SK3804-01S, 2SK1819-01MR, 2SK1943-01

Keywords - 2SK277 MOSFET specs

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