2SK298 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK298
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET 2SK298

2SK298 Datasheet (PDF)

..1. Size:123K hitachi
2sk298 2sk299.pdf

..2. Size:277K inchange semiconductor
2sk298.pdf

isc N-Channel MOSFET Transistor 2SK298FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.75(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:433K toshiba
2sk2986.pdf

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 4.5 m (typ.) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10

0.2. Size:424K toshiba
2sk2985.pdf

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2985 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 70 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10

0.3. Size:136K toshiba
2sk2989.pdf

2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK2989 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 120 m (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V

0.4. Size:426K toshiba
2sk2987.pdf

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2987 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V =

0.5. Size:81K renesas
2sk2980.pdf

2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.2 typ. (VGS = 4 V, ID = 500 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31G 1. Source22. Gate3. DrainS

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