2SK298 Datasheet and Replacement
Type Designator: 2SK298
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: TO3
2SK298 substitution
2SK298 Datasheet (PDF)
2sk298.pdf

isc N-Channel MOSFET Transistor 2SK298FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.75(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2986.pdf

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 4.5 m (typ.) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10
2sk2985.pdf

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2985 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 70 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10
Datasheet: 2SK1696 , 2SK387 , 2SK388 , 2SK513 , 2SK520 , 2SK277 , 2SK278 , 2SK293 , RU6888R , 2SK299 , 2SK1805 , 2SK3804-01S , 2SK1819-01MR , 2SK1943-01 , 2SK1949L , 2SK1949S , 2SK1952 .
History: AONP36336 | SUM110P04-04L | 2SK3819 | STD40NF10 | 2SK3818 | FDS89141 | 45N06
Keywords - 2SK298 MOSFET datasheet
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2SK298 equivalent finder
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History: AONP36336 | SUM110P04-04L | 2SK3819 | STD40NF10 | 2SK3818 | FDS89141 | 45N06



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