2SK1943-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1943-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK1943-01

2SK1943-01 Datasheet (PDF)

..1. Size:278K fuji
2sk1943-01.pdf

FUJI POWER MOSFET2SK1943-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDEC TO-220ABGeneral purpose power amplifierEIAJ SC-46Equivalent c

8.1. Size:81K renesas
2sk1948.pdf

2SK1948 Silicon N Channel MOS FET REJ03G0987-0200 (Previous: ADE-208-1335) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A(Package name: TO-3PL)D1.

8.2. Size:82K renesas
2sk1947.pdf

2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns) Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A(Package

8.3. Size:177K fuji
2sk1942-01.pdf

8.4. Size:210K fuji
2sk1940.pdf

N-channel MOS-FET2SK1940-01FAP-IIA Series 600V 0,75 12A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

8.5. Size:264K fuji
2sk1944-01.pdf

FUJI POWER MOSFET2SK1944-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDECGeneral purpose power amplifierSC-65EIAJEquivalent circuit sche

8.6. Size:189K fuji
2sk1945-01l-01s.pdf

N-channel MOS-FET2SK1945-01L,SFAP-IIA Series 900V 2,8 5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

8.7. Size:126K fuji
2sk1941-01r.pdf

N-channel MOS-FET2SK1941-01RFAP-IIA Series 600V 0,55 16A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > E

8.8. Size:64K hitachi
2sk1949l-s.pdf

2SK1949(L), 2SK1949(S)Silicon N-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche ratingsOutlineDPAK-144123123D1. Gate G2. Drain 3.

8.9. Size:237K inchange semiconductor
2sk1942-01.pdf

isc N-Channel MOSFET Transistor 2SK1942-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

8.10. Size:237K inchange semiconductor
2sk1940-01.pdf

isc N-Channel MOSFET Transistor 2SK1940-01DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

8.11. Size:221K inchange semiconductor
2sk1941.pdf

isc N-Channel MOSFET Transistor 2SK1941DESCRIPTIONDrain Current I =16A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT

8.12. Size:219K inchange semiconductor
2sk1940.pdf

isc N-Channel MOSFET Transistor 2SK1940DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.13. Size:219K inchange semiconductor
2sk1942.pdf

isc N-Channel MOSFET Transistor 2SK1942DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

8.14. Size:237K inchange semiconductor
2sk1944-01.pdf

isc N-Channel MOSFET Transistor 2SK1944-01DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

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