2SK1943-01 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1943-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
Package: TO220AB
2SK1943-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1943-01 Datasheet (PDF)
1.1. 2sk1943-01.pdf 
Size:278K _upd
FUJI POWER MOSFET 2SK1943-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c
4.1. 2sk1945-01l-01s.pdf Size:189K _update
N-channel MOS-FET 2SK1945-01L,S FAP-IIA Series 900V 2,8Ω 5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ
4.2. 2sk1944-01.pdf Size:264K _update
FUJI POWER MOSFET 2SK1944-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier SC-65 EIAJ Equivalent circuit sche
4.3. 2sk1942-01.pdf Size:177K _update
4.4. 2sk1941-01r.pdf Size:126K _update
N-channel MOS-FET 2SK1941-01R FAP-IIA Series 600V 0,55Ω 16A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > E
4.5. 2sk1949l-s.pdf Size:64K _upd
2SK1949(L), 2SK1949(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.
4.6. 2sk1948.pdf Size:81K _renesas
2SK1948 Silicon N Channel MOS FET REJ03G0987-0200 (Previous: ADE-208-1335) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D 1. Gate G 2. D
4.7. 2sk1947.pdf Size:82K _renesas
2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns) Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
4.8. 2sk1940.pdf Size:210K _fuji
N-channel MOS-FET 2SK1940-01 FAP-IIA Series 600V 0,75Ω 12A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva
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