IRFBE20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBE20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38(max) nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: TO220AB

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IRFBE20 Datasheet (PDF)

..1. Size:171K international rectifier
irfbe20.pdf

..2. Size:247K international rectifier
irfbe20pbf.pdf

PD - 95630IRFBE20PbF Lead-Free8/4/04Document Number: 91117 www.vishay.com1IRFBE20PbFDocument Number: 91117 www.vishay.com2IRFBE20PbFDocument Number: 91117 www.vishay.com3IRFBE20PbFDocument Number: 91117 www.vishay.com4IRFBE20PbFDocument Number: 91117 www.vishay.com5IRFBE20PbFDocument Number: 91117 www.vishay.com6IRFBE20PbFPeak Diode Recovery

..3. Size:1072K vishay
irfbe20pbf sihfbe20.pdf

IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

..4. Size:1069K vishay
irfbe20 sihfbe20.pdf

..5. Size:249K vishay
irfbe20pbf.pdf

PD - 95630IRFBE20PbF Lead-Freewww.irf.com 18/4/04IRFBE20PbF2 www.irf.comIRFBE20PbFwww.irf.com 3IRFBE20PbF4 www.irf.comIRFBE20PbFwww.irf.com 5IRFBE20PbF6 www.irf.comIRFBE20PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +-

9.1. Size:2101K international rectifier
irfbe30pbf.pdf

PD - 94945IRFBE30PbF Lead-Free1/15/04Document Number: 91118 www.vishay.com1IRFBE30PbFDocument Number: 91118 www.vishay.com2IRFBE30PbFDocument Number: 91118 www.vishay.com3IRFBE30PbFDocument Number: 91118 www.vishay.com4IRFBE30PbFDocument Number: 91118 www.vishay.com5IRFBE30PbFDocument Number: 91118 www.vishay.com6IRFBE30PbFTO-220AB Package Ou

9.2. Size:167K international rectifier
irfbe30.pdf

9.3. Size:589K international rectifier
irfbe30spbf irfbe30lpbf.pdf

PD - 95507IRFBE30SPbFIRFBE30LPbFHEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche RatedD Fast SwitchingVDSS = 800V Ease of Paralleling Simple Drive RequirementsRDS(on) = 3.0 Lead-FreeGID = 4.1ASDescriptionThird Generation HEXFETs from InternationalRectifier provide the designer with the bestcombination of fast switching, ruggedized device

9.4. Size:448K vishay
irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

9.5. Size:1517K vishay
irfbe30 sihfbe30.pdf

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.6. Size:471K vishay
irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf

9.7. Size:1469K infineon
irfbe30 sihfbe30.pdf

9.8. Size:284K inchange semiconductor
irfbe30.pdf

iscN-Channel MOSFET Transistor IRFBE30FEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... IRFBC30S , IRFBC32 , IRFBC40 , IRFBC40A , IRFBC40AS , IRFBC40L , IRFBC40S , IRFBC42 , MMD60R360PRH , IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A .

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