IRFBE20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95630IRFBE20PbF Lead-Free8/4/04Document Number: 91117 www.vishay.com1IRFBE20PbFDocument Number: 91117 www.vishay.com2IRFBE20PbFDocument Number: 91117 www.vishay.com3IRFBE20PbFDocument Number: 91117 www.vishay.com4IRFBE20PbFDocument Number: 91117 www.vishay.com5IRFBE20PbFDocument Number: 91117 www.vishay.com6IRFBE20PbFPeak Diode Recovery

IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRFBE20, SiHFBE20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 6.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

PD - 95630IRFBE20PbF Lead-Freewww.irf.com 18/4/04IRFBE20PbF2 www.irf.comIRFBE20PbFwww.irf.com 3IRFBE20PbF4 www.irf.comIRFBE20PbFwww.irf.com 5IRFBE20PbF6 www.irf.comIRFBE20PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +-

PD - 94945IRFBE30PbF Lead-Free1/15/04Document Number: 91118 www.vishay.com1IRFBE30PbFDocument Number: 91118 www.vishay.com2IRFBE30PbFDocument Number: 91118 www.vishay.com3IRFBE30PbFDocument Number: 91118 www.vishay.com4IRFBE30PbFDocument Number: 91118 www.vishay.com5IRFBE30PbFDocument Number: 91118 www.vishay.com6IRFBE30PbFTO-220AB Package Ou

PD - 95507IRFBE30SPbFIRFBE30LPbFHEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche RatedD Fast SwitchingVDSS = 800V Ease of Paralleling Simple Drive RequirementsRDS(on) = 3.0 Lead-FreeGID = 4.1ASDescriptionThird Generation HEXFETs from InternationalRectifier provide the designer with the bestcombination of fast switching, ruggedized device

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

iscN-Channel MOSFET Transistor IRFBE30FEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT