IRFBE20 Specs and Replacement
Type Designator: IRFBE20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ -
Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO220AB
- MOSFET ⓘ Cross-Reference Search
IRFBE20 datasheet
..2. Size:247K international rectifier
irfbe20pbf.pdf 
PD - 95630 IRFBE20PbF Lead-Free 8/4/04 Document Number 91117 www.vishay.com 1 IRFBE20PbF Document Number 91117 www.vishay.com 2 IRFBE20PbF Document Number 91117 www.vishay.com 3 IRFBE20PbF Document Number 91117 www.vishay.com 4 IRFBE20PbF Document Number 91117 www.vishay.com 5 IRFBE20PbF Document Number 91117 www.vishay.com 6 IRFBE20PbF Peak Diode Recovery ... See More ⇒
..3. Size:1072K vishay
irfbe20pbf sihfbe20.pdf
IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 6.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
..4. Size:1069K vishay
irfbe20 sihfbe20.pdf
IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 6.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 21 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
..5. Size:249K vishay
irfbe20pbf.pdf
PD - 95630 IRFBE20PbF Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + -... See More ⇒
9.1. Size:2101K international rectifier
irfbe30pbf.pdf
PD - 94945 IRFBE30PbF Lead-Free 1/15/04 Document Number 91118 www.vishay.com 1 IRFBE30PbF Document Number 91118 www.vishay.com 2 IRFBE30PbF Document Number 91118 www.vishay.com 3 IRFBE30PbF Document Number 91118 www.vishay.com 4 IRFBE30PbF Document Number 91118 www.vishay.com 5 IRFBE30PbF Document Number 91118 www.vishay.com 6 IRFBE30PbF TO-220AB Package Ou... See More ⇒
9.3. Size:589K international rectifier
irfbe30spbf irfbe30lpbf.pdf
PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Fast Switching VDSS = 800V Ease of Paralleling Simple Drive Requirements RDS(on) = 3.0 Lead-Free G ID = 4.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device ... See More ⇒
9.4. Size:448K vishay
irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem... See More ⇒
9.5. Size:1517K vishay
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
9.6. Size:471K vishay
irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem... See More ⇒
9.7. Size:1469K infineon
irfbe30 sihfbe30.pdf
IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D ... See More ⇒
9.8. Size:284K inchange semiconductor
irfbe30.pdf
iscN-Channel MOSFET Transistor IRFBE30 FEATURES Low drain-source on-resistance RDS(ON) =3.0 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
Detailed specifications: IRFBC30S
, IRFBC32
, IRFBC40
, IRFBC40A
, IRFBC40AS
, IRFBC40L
, IRFBC40S
, IRFBC42
, IRFB31N20D
, IRFBE30
, IRFBF20
, IRFBF20L
, IRFBF20S
, IRFBF30
, IRFBG20
, IRFBG30
, IRFBL10N60A
.
Keywords - IRFBE20 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
