2SJ650 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ650
Código: J650
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 20 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 145 nS
Conductancia de drenaje-sustrato (Cd): 110 pF
Resistencia drenaje-fuente RDS(on): 0.135 Ohm
Empaquetado / Estuche: TO220F
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2SJ650 Datasheet (PDF)
1.1. 2sj650.pdf 
Size:33K _upd
Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2063A • 4V drive. [2SJ650] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings
5.1. 2sj655.pdf Size:42K _update
Ordering number : EN7712A 2SJ655 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ655 Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Un
5.2. 2sj652-1e.pdf Size:217K _upd
2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ652 Applications Features • ON-resistance RDS(on)1=28.5m (typ.) Ω • Input capacitance Ciss=4360pF (typ.) • 4V drive Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V
5.3. 2sj651.pdf Size:38K _upd
Ordering number : EN7501A 2SJ651 P-Channel Silicon MOSFET 2SJ651 DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS ±20 V Drain Curr
5.4. 2sj656.pdf Size:46K _sanyo
Ordering number : ENN7684 2SJ656 P-Channl Silicon MOSFET 2SJ656 General-Purpose Switching Device Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ656] 4.5 Motor drive, DC / DC converter. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220M
5.5. 2sj652.pdf Size:47K _sanyo
Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ652] Motor drive, DC / DC converter. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SA
Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
