All MOSFET. 2SJ650 Datasheet

 

2SJ650 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ650

SMD Transistor Code: J650

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 145 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: TO220F

2SJ650 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ650 Datasheet (PDF)

1.1. 2sj650.pdf Size:33K _upd

2SJ650
2SJ650

Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2063A • 4V drive. [2SJ650] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings

5.1. 2sj655.pdf Size:42K _update

2SJ650
2SJ650

Ordering number : EN7712A 2SJ655 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ655 Applications Features • Low ON-resistance. • 4V drive. • Ultrahigh-speed switching. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Un

5.2. 2sj652-1e.pdf Size:217K _upd

2SJ650
2SJ650

2SJ652 Ordering number : EN7625A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ652 Applications Features • ON-resistance RDS(on)1=28.5m (typ.) Ω • Input capacitance Ciss=4360pF (typ.) • 4V drive Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V

 5.3. 2sj651.pdf Size:38K _upd

2SJ650
2SJ650

Ordering number : EN7501A 2SJ651 P-Channel Silicon MOSFET 2SJ651 DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS ±20 V Drain Curr

5.4. 2sj656.pdf Size:46K _sanyo

2SJ650
2SJ650

Ordering number : ENN7684 2SJ656 P-Channl Silicon MOSFET 2SJ656 General-Purpose Switching Device Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ656] 4.5 Motor drive, DC / DC converter. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SANYO : TO-220M

 5.5. 2sj652.pdf Size:47K _sanyo

2SJ650
2SJ650

Ordering number : ENN7625 2SJ652 P-Channl Silicon MOSFET 2SJ652 General-Purpose Switching Device Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2063A 4V drive. [2SJ652] Motor drive, DC / DC converter. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source Specifications 2.55 2.55 SA

Datasheet: 2SJ173 , 2SJ174 , 2SJ687 , 2SJ687-ZK , 2SJ690 , 2V7002K , 2V7002L , 2V7002W , 2SK2837 , 2SJ651 , 2SJ652-1E , 2SJ661-1E , 2SJ661-DL-1E , 2SJ661-DL-E , 2SJ673 , 2SJ683 , 2SJ176 .

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