2SJ661-1E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ661-1E

Código: J661

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 65 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 38 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 80 nC

Tiempo de elevación (tr): 285 nS

Conductancia de drenaje-sustrato (Cd): 470 pF

Resistencia drenaje-fuente RDS(on): 0.039 Ohm

Empaquetado / Estuche: TO262

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2SJ661-1E Datasheet (PDF)

1.1. 2sj661-1e.pdf Size:283K _upd

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com – – Ω 60V, 38A, 39m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=29.5m (typ.) • Input capacitance Ciss=4360pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage

4.1. 2sj661.pdf Size:38K _sanyo

Ordering number : EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features � Low ON-resistance. � Ultrahigh-speed switching. � 4V drive. � Motor drive, DC / DC converter. � Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25�C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-

5.1. 2sj669.pdf Size:209K _toshiba

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to

5.2. 2sj668.pdf Size:204K _toshiba

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -

5.3. 2sj665.pdf Size:38K _sanyo

Ordering number : EN8590 2SJ665 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ665 Applications Features � Low ON-resistance. � Ultrahigh-speed switching. � 4V drive. � Motor drive, DC / DC converter. � Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25�C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

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